公开(公告)号：US09202731B2

公开(公告)日：2015-12-01

申请号：US13334406

申请日：2011-12-22

Applicant: Shigeru Kasai ,  Ayuta Suzuki ,  Ikuo Sawada ,  Naoki Shindo ,  Masatake Yoneda ,  Kazuhiro Ooya

Inventor： Shigeru Kasai ,  Ayuta Suzuki ,  Ikuo Sawada ,  Naoki Shindo ,  Masatake Yoneda ,  Kazuhiro Ooya

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67115 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67051

Abstract: Disclosed is a liquid processing apparatus that processes a substrate with a processing liquid. The processing apparatus includes: a substrate holder configured to hold the substrate; a processing liquid supply unit configured to supply the processing liquid to the substrate held by the substrate holder; a rinsing liquid supply unit configured to supply a rinsing liquid to the substrate; and a light emitting element configured to emit light of a wavelength range, which is absorbed only by the substrate, and irradiate the emitted light to the substrate.

Abstract translation: 公开了一种用处理液处理基板的液体处理装置。 所述处理装置包括：基板保持器，其构造成保持所述基板; 处理液供给部，其将处理液供给到由所述基板保持体保持的基板; 冲洗液体供给单元，其配置为向所述基板供给冲洗液; 以及发光元件，被配置为发射仅被衬底吸收的波长范围的光，并将发射的光照射到衬底。

公开(公告)号：US08107801B2

公开(公告)日：2012-01-31

申请号：US12053336

申请日：2008-03-21

Applicant: Masahiro Shimizu ,  Shigeru Kasai ,  Masatake Yoneda

Inventor： Masahiro Shimizu ,  Shigeru Kasai ,  Masatake Yoneda

IPC: F26B19/00

CPC classification number: H01L21/67115 ,  H01L21/324 ,  H01L21/67109

Abstract: A heat treatment apparatus for performing prescribed heat treatment to a subject (W) to be treated is provided with a processing chamber in which air can be exhausted; a mounting table arranged in the processing chamber, for placing on an upper plane the subject to be treated; a plurality of thermoelectric conversion elements arranged on an upper part of the mounting table; a light transmitting window for covering a ceiling portion of the processing chamber airtight; and a gas introduction unit for introducing a required gas into the processing chamber. A heating unit which includes a plurality of heating light sources including a semiconductor light emitting element for emitting heating light to the subject to be treated, is provided above the light transmitting window. Thus, heating efficiency is improved and temperature can be increased and reduced at a higher speed for the subject to be treated.

Abstract translation: 对待处理对象（W）进行规定的热处理的热处理装置设置有能够排出空气的处理室; 布置在处理室中的安装台，用于将待处理的物体放置在上平面上; 多个热电转换元件，布置在所述安装台的上部; 用于将处理室的顶部部分密封的透光窗口; 以及用于将所需气体引入处理室的气体引入单元。 包括多个加热光源的加热单元设置在透光窗的上方，该多个加热光源包括用于向被处理物体发出加热光的半导体发光元件。 因此，提高加热效率并且可以以更高的速度提高和降低待处理对象的温度。

公开(公告)号：US20110174790A1

公开(公告)日：2011-07-21

申请号：US13001357

申请日：2009-06-24

Applicant: Tomohiro Suzuki ,  Masatake Yoneda ,  Shigeru Kasai ,  Kazuhiro Ooya

Inventor： Tomohiro Suzuki ,  Masatake Yoneda ,  Shigeru Kasai ,  Kazuhiro Ooya

IPC: B23K26/12 ,  B23K26/00

CPC classification number: H01L21/67115

Abstract: The present invention is an annealing apparatus configured to perform an annealing process to an object to be processed, the annealing apparatus comprising: a processing vessel in which the object to be processed can be accommodated; a support unit configured to support the object to be processed in the processing vessel; a gas supply unit configured to supply a process gas into the processing vessel; an exhaust unit configured to discharge an atmosphere in the processing vessel; and a rear-side heating unit including a plurality of laser elements configured to irradiate heating light beams toward an overall rear surface of the object to be processed.

Abstract translation: 本发明是一种对被处理物进行退火处理的退火装置，该退火装置包括：处理容器，其中可容纳待加工物体; 支撑单元，其构造成在处理容器中支撑要处理的物体; 气体供给单元，其构造成将处理气体供给到处理容器中; 排气单元，其构造成排出处理容器中的气氛; 以及后侧加热单元，其包括多个激光元件，所述多个激光元件被配置为朝向待处理物体的整个后表面照射加热光束。

公开(公告)号：US08440939B2

公开(公告)日：2013-05-14

申请号：US12680221

申请日：2008-09-25

Applicant: Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

Inventor： Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

IPC: H05B3/00

CPC classification number: H01L21/67115 ,  H01L25/0753 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.

Abstract translation: 公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光 对应于来自发光元件的光被传输到其中的加热源设置的构件。 加热源具有附着在朝向晶片的支撑件上的发光元件。 每个发光元件分别被透明树脂制成的透镜层覆盖。

公开(公告)号：US20100314377A1

公开(公告)日：2010-12-16

申请号：US12680221

申请日：2008-09-25

Applicant: Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

Inventor： Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

IPC: H05B1/00 ,  H01L21/26 ,  H01L33/00

CPC classification number: H01L21/67115 ,  H01L25/0753 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.

Abstract translation: 公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光 对应于来自发光元件的光被传输到其中的加热源设置的构件。 加热源具有附着在朝向晶片的支撑件上的发光元件。 每个发光元件分别被透明树脂制成的透镜层覆盖。

公开(公告)号：US20080187299A1

公开(公告)日：2008-08-07

申请号：US12053336

申请日：2008-03-21

Applicant: Masahiro Shimizu ,  Shigeru Kasai ,  Masatake Yoneda

Inventor： Masahiro Shimizu ,  Shigeru Kasai ,  Masatake Yoneda

IPC: F26B3/30

CPC classification number: H01L21/67115 ,  H01L21/324 ,  H01L21/67109

Abstract: A heat treatment apparatus for performing prescribed heat treatment to a subject (W) to be treated is provided with a processing chamber in which air can be exhausted; a mounting table arranged in the processing chamber, for placing on an upper plane the subject to be treated; a plurality of thermoelectric conversion elements arranged on an upper part of the mounting table; a light transmitting window for covering a ceiling portion of the processing chamber airtight; and a gas introduction unit for introducing a required gas into the processing chamber. A heating unit which includes a plurality of heating light sources including a semiconductor light emitting element for emitting heating light to the subject to be treated, is provided above the light transmitting window. Thus, heating efficiency is improved and temperature can be increased and reduced at a higher speed for the subject to be treated.

Abstract translation: 对待处理对象（W）进行规定的热处理的热处理装置设置有能够排出空气的处理室; 布置在处理室中的安装台，用于将待处理的物体放置在上平面上; 多个热电转换元件，布置在所述安装台的上部; 用于将处理室的顶部部分密封的透光窗口; 以及用于将所需气体引入处理室的气体引入单元。 包括多个加热光源的加热单元设置在透光窗的上方，该多个加热光源包括用于向被处理物体发出加热光的半导体发光元件。 因此，提高加热效率并且可以以更高的速度提高和降低待处理对象的温度。

公开(公告)号：US08897631B2

公开(公告)日：2014-11-25

申请号：US12864792

申请日：2009-01-19

Applicant: Shigeru Kasai ,  Hiroyuki Miyashita ,  Tomohiro Suzuki ,  Masatake Yoneda ,  Kazuhiro Ooya

Inventor： Shigeru Kasai ,  Hiroyuki Miyashita ,  Tomohiro Suzuki ,  Masatake Yoneda ,  Kazuhiro Ooya

IPC: F27D11/12 ,  H01L21/67 ,  H01L21/324 ,  H01L21/268

CPC classification number: H01L21/67109 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115

Abstract: An annealing apparatus includes heating sources provided to face a wafer W, the heating sources having LEDs emitting lights to the wafer; light-transmitting members for transmitting the lights emitted from the LEDs; and cooling members made of aluminum and provided to directly contact with the heating sources, respectively. The heating sources include a plurality of LED arrays having supporters made of AlN, each having one surface on which the LEDs are adhered by using a silver paste; and other surface on which thermal diffusion members made of copper are adhered by using a solder. The LED arrays are fixed to the cooling member by using screws via a silicone grease.

Abstract translation: 退火装置包括设置成面向晶片W的加热源，所述加热源具有向晶片发光的LED; 用于透射从LED发射的光的透光构件; 和由铝制成的冷却部件，分别与加热源直接接触。 加热源包括具有由AlN制成的支撑体的多个LED阵列，每个具有一个表面，其上通过使用银膏粘合LED; 和由铜制成的热扩散构件的其他表面通过焊料粘合。 LED阵列通过使用硅脂润滑脂的螺丝固定在冷却部件上。

公开(公告)号：US20100038833A1

公开(公告)日：2010-02-18

申请号：US12440034

申请日：2007-08-31

Applicant: Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

Inventor： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

IPC: H01L21/26 ,  C21D1/74

CPC classification number: H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.

Abstract translation: 提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

公开(公告)号：US06733593B1

公开(公告)日：2004-05-11

申请号：US09646343

申请日：2000-09-18

Applicant: Sumi Tanaka ,  Masatake Yoneda

Inventor： Sumi Tanaka ,  Masatake Yoneda

IPC: C23C1600

CPC classification number: C23C16/45521 ,  C23C16/04 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/28556 ,  H01L21/67109 ,  H01L21/68721 ,  H01L21/68735

Abstract: A film deposition apparatus of the present invention includes a container forming a processing chamber for processing a target object, a mounting table which is provided in the processing chamber and on which the target object is mounted, a first heating apparatus provided in the mounting table, for heating the target object mounted on the mounting table, a first gas supply section provided in the container, for supplying processing gas into the processing chamber, the processing gas forming a high-melting-point metal-film layer on the target object mounted on the mounting table, a movable clamp for clamping a periphery of the target object and holding the target object on the mounting table, a second heating apparatus formed separately from the clamp, for heating the clamp indirectly, a gas flow path formed between the clamp and the second heating apparatus when the clamp is moved to a position where the clamp clamps the target object, and a second gas supply section for causing backside gas to flow into the gas flow path.

Abstract translation: 本发明的成膜装置包括形成用于处理目标物体的处理室的容器，设置在处理室中并安装有目标物体的安装台，设置在安装台中的第一加热装置， 用于加热安装在安装台上的目标物体，设置在容器中的第一气体供应部分，用于将处理气体供应到处理室中，处理气体在安装在安装台上的目标物体上形成高熔点金属膜层 安装台，用于夹持目标物体的周边并将目标物体保持在安装台上的可移动夹具，与夹具分开形成的用于间接加热夹具的第二加热装置，形成在夹具和 第二加热装置，当夹具移动到夹具夹持目标物体的位置时，第二气体供给部， 气体流入气体流路。

公开(公告)号：US20120328273A1

公开(公告)日：2012-12-27

申请号：US13524023

申请日：2012-06-15

Applicant: Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

Inventor： Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

IPC: H05B6/00

CPC classification number: H01L21/67115 ,  H05B3/0033

Abstract: Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.

Abstract translation: 公开了一种可以获得高产量并减少热处理装置的占用面积的热处理装置和方法。 通过照射与晶片的吸收波长相对应的红外光的LED模块对晶片进行加热，因此可以快速加热晶片。 由于将LED用作热源并且LED的温度升高很小，因此可以在与加热处理区域相同的处理区域中进行加热处理之后的冷却处理。 结果，可以减少热处理装置的安装面积。 由于可以节省在加热处理区域和冷却处理区域之间移动的时间，因此可以缩短包括加热处理和随后的冷却处理的一系列处理所需的时间，从而提高生产量。