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    Image sensors having multiple photoelectric conversion devices therein
    1.
    发明授权
    Image sensors having multiple photoelectric conversion devices therein 有权
    具有多个光电转换装置的图像传感器

    公开(公告)号：US08625016B2

    公开(公告)日：2014-01-07

    申请号：US12958799

    申请日：2010-12-02

    Applicant: Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    Inventor： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    IPC: H04N5/335 ,  H01L31/062 ,  H01L21/02 ,  H01L21/00

    CPC classification number: H01L27/14647 ,  H01L27/1463 ,  H01L27/14641 ,  H01L31/103 ,  H04N5/374 ,  H04N5/3745 ,  H04N9/045 ,  H04N2209/047

    Abstract: Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

    Abstract translation: 图像传感器包括设置在基板的下部的第二光电转换装置和在二次光电转换装置和基板的光接收表面之间延伸的第一光电转换装置。 第一和第二光电转换装置之间的电隔离由光电子势垒提供，光电子势垒可以是光学透明的电绝缘材料。 可以使用MOS晶体管将在第一和第二光电转换装置内产生的光电子转移到图像传感器内的浮动扩散区域。 这些晶体管可以分别响应于第一和第二门控信号，表示用于将在第一和第二光电转换装置中产生的光电子转移到衬底中的浮动扩散区域的装置的一个示例。 第一和第二门控信号可以在非重叠时间间隔期间被激活。

    Image Sensors Having Multiple Photoelectric Conversion Devices Therein
    3.
    发明申请
    Image Sensors Having Multiple Photoelectric Conversion Devices Therein 有权
    具有多个光电转换器件的图像传感器

    公开(公告)号：US20110128430A1

    公开(公告)日：2011-06-02

    申请号：US12958799

    申请日：2010-12-02

    Applicant: Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    Inventor： Eric Fossum ,  Suk Pil Kim ,  Yoon Dong Park ,  Hoon Sang Oh ,  Hyung Jin Bae ,  Tae Eung Yoon

    IPC: H04N5/335 ,  H01L31/113 ,  H01L31/0232 ,  H01L31/00

    CPC classification number: H01L27/14647 ,  H01L27/1463 ,  H01L27/14641 ,  H01L31/103 ,  H04N5/374 ,  H04N5/3745 ,  H04N9/045 ,  H04N2209/047

    Abstract: Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

    Abstract translation: 图像传感器包括设置在基板的下部的第二光电转换装置和在二次光电转换装置和基板的光接收表面之间延伸的第一光电转换装置。 第一和第二光电转换装置之间的电隔离由光电子势垒提供，光电子势垒可以是光学透明的电绝缘材料。 可以使用MOS晶体管将在第一和第二光电转换装置内产生的光电子转移到图像传感器内的浮动扩散区域。 这些晶体管可以分别响应于第一和第二门控信号，表示用于将在第一和第二光电转换装置中产生的光电子转移到衬底中的浮动扩散区域的装置的一个示例。 第一和第二门控信号可以在非重叠时间间隔期间被激活。

    Double sampling active pixel sensor with double sampling temperature sensor
    4.
    发明申请
    Double sampling active pixel sensor with double sampling temperature sensor 审中-公开
    双采样有源像素传感器，采用双采样温度传感器

    公开(公告)号：US20080007641A1

    公开(公告)日：2008-01-10

    申请号：US11898908

    申请日：2007-09-17

    Applicant: Per Pahr ,  Alf Olsen ,  Eric Fossum

    Inventor： Per Pahr ,  Alf Olsen ,  Eric Fossum

    IPC: H04N5/335

    CPC classification number: H04N5/3575 ,  H04N5/361

    Abstract: A system which operates to determine temperature of an image sensor using the same signal chain that is used to detect the image sensor actual outputs. A correlated double sampling circuit is used to obtain the image outputs. That's same correlated double sampling circuit is used to receive two different inputs from the temperature circuit, and to subtract one from the other. The temperature output can be perceived, for example, once each frame.

    Abstract translation: 使用与用于检测图像传感器实际输出的相同信号链来确定图像传感器的温度的系统。 使用相关双采样电路来获得图像输出。 相同的双采样电路用于从温度电路接收两个不同的输入，并从另一个中减去一个。 温度输出可以被感知，例如，每帧一次。

    Two-transistor pixel with buried reset channel and method of formation
    5.
    发明申请
    Two-transistor pixel with buried reset channel and method of formation 审中-公开
    具有埋置复位通道的双晶体管像素和形成方法

    公开(公告)号：US20050253177A1

    公开(公告)日：2005-11-17

    申请号：US11157788

    申请日：2005-06-22

    Applicant: Eric Fossum

    Inventor： Eric Fossum

    IPC: H01L21/00 ,  H01L27/146 ,  H01L29/768 ,  H01L29/93 ,  H01L31/062 ,  H04N3/15

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/369

    Abstract: A two-transistor pixel of an imager has a reset region formed adjacent a charge collection region of a photodiode and in electrical communication with a gate of a source follower transistor. The reset region is connected to one terminal of a capacitor which integrates collected charge of the photodiode. The charge collection region is reset by pulsing the other terminal of the capacitor from a higher to a lower voltage.

    Abstract translation: 成像器的双晶体管像素具有邻近光电二极管的电荷收集区域形成并与源极跟随器晶体管的栅极电连通的复位区域。 复位区域连接到集成了光电二极管的收集电荷的电容器的一个端子。 通过将电容器的另一个端子从较高电压脉冲到较低电压来复位电荷收集区域。

    High-low sensitivity pixel
    7.
    发明申请
    High-low sensitivity pixel 有权
    高低灵敏度像素

    公开(公告)号：US20050092894A1

    公开(公告)日：2005-05-05

    申请号：US10696559

    申请日：2003-10-30

    Applicant: Eric Fossum

    Inventor： Eric Fossum

    IPC: H01L27/00 ,  H01L27/146 ,  H04N3/15

    CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14641 ,  H04N5/35563 ,  H04N5/3559 ,  H04N5/37457

    Abstract: A pixel circuit, and a method for operating a high-low sensitivity (HLS) pixel circuit, to provide increased dynamic range in an imager. The pixel circuit combines a four transistor (“4T”) and a three-transistor plus capacitor (“3TC”) configuration in one pixel, where the 4T portion of the pixel is coupled to a high sensitivity buried photodiode region, and the 3TC portion of the pixel is coupled to a low sensitivity buried photodiode region. The pixel circuit first reads out charge from the high sensitivity photodiode region and compares it to a reset voltage, then reads out charge from the low sensitivity photodiode region. Under an alternate embodiment, multiple HLS pixels are coupled through a common floating diffusion node.

    Abstract translation: 像素电路和用于操作高 - 低灵敏度（HLS）像素电路的方法，以在成像器中提供增加的动态范围。 像素电路在一个像素中组合四个晶体管（“4T”）和三晶体管加电容（“3TC”）配置，其中像素的4T部分耦合到高灵敏度掩埋光电二极管区域，并且3TC部分 的像素耦合到低灵敏度掩埋光电二极管区域。 像素电路首先从高灵敏度光电二极管区域读出电荷并将其与复位电压进行比较，然后从低灵敏度光电二极管区域读出电荷。 在替代实施例中，多个HLS像素通过公共浮动扩散节点耦合。

    Center of mass detection via an active pixel sensor
    9.
    发明授权
    Center of mass detection via an active pixel sensor 失效
    通过有源像素传感器进行质量检测中心

    公开(公告)号：US06476860B1

    公开(公告)日：2002-11-05

    申请号：US09114347

    申请日：1998-07-13

    Applicant: Orly Yadid-Pecht ,  Brad Minch ,  Bedabrata Pain ,  Eric Fossum

    Inventor： Orly Yadid-Pecht ,  Brad Minch ,  Bedabrata Pain ,  Eric Fossum

    IPC: H04N5225

    CPC classification number: H04N5/232 ,  H04N5/2351 ,  H04N5/374 ,  H04N5/378

    Abstract: An imaging system for identifying the location of the center of mass (“COM”) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.

    Abstract translation: 用于识别图像中的质心（“COM”）的位置的成像系统。 在一个方面，成像系统包括以矩阵形式布置的多个感光元件。 耦合到感光元件的质量电路的中心包括电阻网络和包括至少一个双极晶体管的归一化电路。 质心电路识别矩阵中的质心位置，包括：行电路，其中行电路识别矩阵的每行中的质心行值，并识别每行的行强度; 水平电路，其中水平电路识别质心水平值; 和垂直电路，其中垂直电路标识质心垂直值。 水平和垂直质心值表示图像的质心位置的坐标。

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