公开(公告)号：US20210336041A1

公开(公告)日：2021-10-28

申请号：US17237763

申请日：2021-04-22

申请人： X-FAB DRESDEN GMBH & CO. KG

发明人： Victor SIZOV

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/66

摘要： A semiconductor contact structure including a two-dimensional electron gas (2DEG) between a first and a second semiconductor layer and a silicon implant extending into at least a part of the first semiconductor layer and into at least a part of the second semiconductor layer and connected to the 2DEG along an interface between the 2DEG and the silicon implant, wherein the interface has a nonlinear shape. The structure further includes a contact connected to the 2DEG via the silicon implant.

公开(公告)号：US20210273040A1

公开(公告)日：2021-09-02

申请号：US17186034

申请日：2021-02-26

申请人： X-FAB Dresden GmbH & Co. KG

发明人： Denis Reso

IPC分类号： H01L49/02 ,  H01L23/522

摘要： A microelectronic device comprises: a first electrode; a second electrode located vertically below said first electrode and separated by a dielectric material; and a connection wire electrically connected to said second electrode; wherein said first electrode comprises a notch located vertically above said connection wire.

公开(公告)号：US11695033B2

公开(公告)日：2023-07-04

申请号：US17186034

申请日：2021-02-26

申请人： X-FAB Dresden GmbH & Co. KG

发明人： Denis Reso

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L23/48 ,  H01L49/02

CPC分类号： H01L28/60 ,  H01L23/5223

摘要： A microelectronic device comprises:



a first electrode;
a second electrode located vertically below said first electrode and separated by a dielectric material; and
a connection wire electrically connected to said second electrode;
wherein said first electrode comprises a notch located vertically above said connection wire.