公开(公告)号：US20080149997A1

公开(公告)日：2008-06-26

申请号：US11892850

申请日：2007-08-28

申请人： Young-gu Jin ,  Ki-ha Hong

发明人： Young-gu Jin ,  Ki-ha Hong

IPC分类号： H01L29/76 ,  G11C11/34

CPC分类号： H01L29/7881 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/42328

摘要： Provided are a nonvolatile memory device and a method of operating the same, which have increased operation reliability and which facilitate increased integration. The nonvolatile memory device may include a semiconductor substrate, and at least one charge storage layer may be provided on a semiconductor substrate. At least one control gate electrode may be provided on the at least one charge storage layer. At least one first auxiliary gate electrode may be disposed on one side of and apart from the at least one charge storage layer and isolated from the semiconductor substrate.

摘要翻译： 提供了一种非易失性存储器件及其操作方法，其具有增加的操作可靠性并且有助于增加集成。 非易失性存储器件可以包括半导体衬底，并且可以在半导体衬底上提供至少一个电荷存储层。 至少一个控制栅电极可以设置在至少一个电荷存储层上。 至少一个第一辅助栅电极可以设置在至少一个电荷存储层的一侧并且与该半导体衬底分离。

公开(公告)号：US20060091440A1

公开(公告)日：2006-05-04

申请号：US11221864

申请日：2005-09-09

申请人： Noe-jung Park ,  Kwang-hee Kim ,  Dong-hun Kang ,  Jae-woong Hyun ,  Ki-ha Hong

发明人： Noe-jung Park ,  Kwang-hee Kim ,  Dong-hun Kang ,  Jae-woong Hyun ,  Ki-ha Hong

IPC分类号： H01L29/94

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0051 ,  H01L51/0512 ,  H01L51/052 ,  H01L51/0525 ,  Y10S977/742

摘要： Provided is a memory device comprising a molecular adsorption layer. The memory device includes: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) layer electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a molecular adsorption layer which is formed on the first insulating layer and acts as a charge storage layer; and a second insulating layer formed on the molecular adsorption layer.

摘要翻译： 提供了包含分子吸附层的记忆装置。 存储器件包括：衬底; 源电极和漏电极，形成在基板上并彼此分离; 电连接到源电极和漏电极的碳纳米管（CNT）层; 与CNT接触以存储来自CNT的电荷的存储单元; 以及形成在所述存储单元上的栅电极，其中所述存储单元包括：形成在所述CNT上的第一绝缘层; 分子吸附层，其形成在第一绝缘层上并用作电荷存储层; 以及形成在分子吸附层上的第二绝缘层。