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公开(公告)号：US09312249B2
公开(公告)日：2016-04-12
申请号：US14338225
申请日：2014-07-22
Applicant: Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
Inventor： Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC: H01L33/56 , H01L25/13 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/44 , H01L33/48 , H01L33/54 , H05B33/08 , H01L25/075 , H01L33/50
CPC classification number: H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
Abstract translation: 在半导体发光器件中，发光结构包括依次形成在导电基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第二导电型电极包括导电孔和电连接部。 导电通孔穿过第一导电类型半导体层和有源层，并连接到第二导电类型半导体层的内部。 电连接部分从导电通孔延伸并暴露于发光结构的外部。 绝缘体将第二导电型电极与导电基板，第一导电型半导体层和有源层电隔离。 形成钝化层以覆盖发光结构中的有源层的至少一个侧表面。 在从有源层发射的光的路径上形成不均匀结构。
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公开(公告)号：US20160093778A1
公开(公告)日：2016-03-31
申请号：US14495898
申请日：2014-09-25
Applicant: ProLight Opto Technology Corporation
Inventor： Chen-Lun HSING CHEN , Jung-Hao HUNG , Meng-Ting HSIEH
CPC classification number: H01L33/54 , H01L33/486 , H01L33/56 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/00014
Abstract: A light emitting diode is provided. The light emitting diode comprises a lead frame, a resin base, an emitting chip and a glue. The lead frame has a plurality of electrode portions thereon. The resin base is provided on the lead frame, the resin base having an outer wall thereon and around an edge to form an opening, and the opening exposing the electrode portions; and an inner wall extending from the outer wall, and the inner side of the inner wall has a slope to decrease the inner diameter of the opening gradually. The emitting chip is attached on the top surface(s) of one or two the electrode portion(s). The glue is filled into a space between the emitting chip and the inner wall to expose the top surface of the emitting chip. Therefore, the illumination of the light emitting diode can be enhanced.
Abstract translation: 提供发光二极管。 发光二极管包括引线框架，树脂基座，发光芯片和胶水。 引线框架上具有多个电极部分。 树脂基部设置在引线框架上，树脂基底上具有外壁并且围绕边缘形成开口，并且露出电极部分的开口; 以及从外壁延伸的内壁，内壁的内侧具有逐渐减小开口内径的斜面。 发射芯片附着在一个或两个电极部分的顶表面上。 将胶水填充到发光芯片和内壁之间的空间中以暴露发光芯片的顶表面。 因此，可以提高发光二极管的照明。
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公开(公告)号：US09299895B1
公开(公告)日：2016-03-29
申请号：US14495898
申请日：2014-09-25
Applicant: ProLight Opto Technology Corporation
Inventor： Chen-Lun Hsing Chen , Jung-Hao Hung , Meng-Ting Hsieh
CPC classification number: H01L33/54 , H01L33/486 , H01L33/56 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/00014
Abstract: A light emitting diode is provided. The light emitting diode comprises a lead frame, a resin base, an emitting chip and a glue. The lead frame has a plurality of electrode portions thereon. The resin base is provided on the lead frame, the resin base having an outer wall thereon and around an edge to form an opening, and the opening exposing the electrode portions; and an inner wall extending from the outer wall, and the inner side of the inner wall has a slope to decrease the inner diameter of the opening gradually. The emitting chip is attached on the top surface(s) of one or two the electrode portion(s). The glue is filled into a space between the emitting chip and the inner wall to expose the top surface of the emitting chip. Therefore, the illumination of the light emitting diode can be enhanced.
Abstract translation: 提供发光二极管。 发光二极管包括引线框架，树脂基座，发光芯片和胶水。 引线框架上具有多个电极部分。 树脂基部设置在引线框架上，树脂基底上具有外壁并且围绕边缘形成开口，并且露出电极部分的开口; 以及从外壁延伸的内壁，内壁的内侧具有逐渐减小开口内径的斜面。 发射芯片附着在一个或两个电极部分的顶表面上。 将胶水填充到发光芯片和内壁之间的空间中以暴露发光芯片的顶表面。 因此，可以提高发光二极管的照明。
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公开(公告)号：US20160079217A1
公开(公告)日：2016-03-17
申请号：US14838850
申请日：2015-08-28
Applicant: Kabushiki Kaisha Toshiba
Inventor： Hidenori Egoshi , Yoshio Noguchi , Kazuhiro Inoue , Takashi Arakawa , Teruo Takeuchi , Toshihiro Kuroki , Masahiro Ogushi
CPC classification number: H01L25/167 , H01L33/486 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2224/48257 , H01L2224/48465 , H01L2224/8592 , H01L2224/85951 , H01L2924/181 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: According to one embodiment, a semiconductor light emitting device includes a lead frame; a chip mounted on the lead frame, the chip including a substrate and a light emitting element provided on the substrate; a wall section including an inner wall facing to a side portion of the chip, and an outer wall on an opposite side to the inner wall; and a phosphor layer provided on at least the chip. A distance between the side portion of the chip and the inner wall of the wall section is smaller than a thickness of the chip. An angle between an upper surface of the lead frame and the inner wall is smaller than an angle between the upper surface of the lead frame and the outer wall.
Abstract translation: 根据一个实施例，半导体发光器件包括引线框架; 安装在所述引线框架上的芯片，所述芯片包括基板和设置在所述基板上的发光元件; 壁部，其包括面向所述芯片的侧部的内壁，以及与所述内壁相反的一侧的外壁; 以及至少设置在所述芯片上的荧光体层。 芯片的侧部与壁部的内壁之间的距离小于芯片的厚度。 引线框架的上表面与内壁之间的角度小于引线框架的上表面与外壁之间的角度。
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75.发明授权
公开(公告)号：US09287190B2
公开(公告)日：2016-03-15
申请号：US14337977
申请日：2014-07-22
Applicant: International Business Machines Corporation
Inventor： Daniel J. Buvid , Eric J. Campbell , Tyler Jandt , Joseph Kuczynski
IPC: H01L23/36 , H01L23/29 , H01L23/31 , H01L23/367
CPC classification number: H01L23/3107 , H01L23/29 , H01L23/3114 , H01L23/3121 , H01L23/315 , H01L23/3171 , H01L23/367 , H01L23/373 , H01L23/44 , H01L23/473 , H01L23/564 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2224/05009 , H01L2224/11821 , H01L2224/11823 , H01L2224/11826 , H01L2224/11827 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/17181 , H01L2224/45111 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73257 , H01L2224/742 , H01L2224/8192 , H01L2224/8592 , H01L2224/94 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/00011 , H01L2924/00014 , H01L2924/10253 , H01L2924/1433 , H01L2924/1434 , H01L2924/1436 , H01L2924/15311 , H01L2924/15312 , H01L2924/15313 , H01L2924/16151 , H01L2924/16251 , H01L2924/181 , H05K1/0203 , H05K7/20236 , H05K2201/064 , H01L2924/014 , H01L2224/03 , H01L2924/00012 , H01L2924/01049 , H01L2924/01048 , H01L2224/85399 , H01L2224/05599
Abstract: Devices employing semiconductor die having hydrophobic coatings, and related cooling methods are disclosed. A device may include at least one semiconductor die electrically coupled to a substrate by electrical contact elements. During operation the semiconductor die and the electrical contact elements generate heat. By applying hydrophobic coatings to the semiconductor die and the electrical contact elements, a cooling fluid may be used to directly cool the semiconductor die and the electrical contact elements to maintain these components within temperature limits and free from electrical shorting and corrosion. In this manner, the semiconductor die and associated electrical contact elements may be cooled to avoid the creation of damaging localized hot spots and temperature-sensitive semiconductor performance issues.
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公开(公告)号：US20160052780A1
公开(公告)日：2016-02-25
申请号：US14531256
申请日：2014-11-03
Applicant: LINGSEN PRECISION INDUSTRIES, LTD.
Inventor： Hsien-Ken LIAO , Ming-Te TU
CPC classification number: B81C1/0023 , B81B7/007 , B81B2201/0257 , B81B2207/012 , B81B2207/093 , B81B2207/095 , B81C2203/0127 , B81C2203/0154 , B81C2203/0792 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H04R1/04 , H04R31/00 , H04R2201/003 , H01L2924/00014
Abstract: A stacked MEMS microphone packaging method includes the steps of: providing a substrate having a conducting part and a through hole; affixing a retaining wall to the substrate and forming a conducting circuit in electrical connection with the conducting part; mounting a processor chip and a sensor chip on the substrate to have the sensor chip be disposed at a top side of the through hole; providing a carrier board having a first solder pad and a second solder pad and fixedly mounting the carrier board at the retaining wall and electrically coupled to the first solder pad and the second solder pad. Thus, the method can make a flip architecture MEMS microphone, reducing the steps of the packaging process and lowering the degree of difficulty of the manufacturing process and the manufacturing costs.
Abstract translation: 层叠的MEMS麦克风封装方法包括以下步骤：提供具有导电部分和通孔的基板; 将固定壁固定到基底上并形成与导电部件电连接的导电电路; 将处理器芯片和传感器芯片安装在基板上以使传感器芯片设置在通孔的顶侧; 提供具有第一焊盘和第二焊盘的载板，并将载板固定地安装在挡墙处并电耦合到第一焊盘和第二焊垫。 因此，该方法可以制造MEMS麦克风的翻转架构，减少封装过程的步骤，降低制造过程的难度和制造成本。
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77.发明授权
公开(公告)号：US09263656B2
公开(公告)日：2016-02-16
申请号：US14626997
申请日：2015-02-20
Applicant: Stanley Electric Co., Ltd.
Inventor： Yuichi Ito
IPC: H01L33/00 , H01L31/0203 , H01L23/495 , H01L23/48 , H01L23/52 , H01L23/29 , H01L33/62 , H01L33/56 , H01L33/48 , H01L33/38 , H01L33/54 , H01L23/31 , H01L27/146
CPC classification number: H01L33/62 , H01L23/3135 , H01L27/14618 , H01L31/0203 , H01L33/38 , H01L33/486 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor light-emitting device having favorable optical characteristics can include a first conductor pattern having a die-bonding pad and a second conductor pattern having a wire bonding pad, which are formed on a circuit board. The semiconductor light-emitting device can also include a semiconductor light-emitting chip mounted on the die-bonding pad, a first encapsulating material, which can include a wavelength converting material to wavelength-convert light emitted from the chip and can cover the chip in a substantially fair dome shape on the circuit board, and a second encapsulating resin to cover the first encapsulating material, which can transmit light emitted from the first encapsulating material. Thus, a semiconductor light-emitting device is provided, which can emit a mixture light having various color tones and favorable optical characteristics and which can be used to illuminate goods laid out in a narrow show window, a vending machine, and the like.
Abstract translation: 具有良好光学特性的半导体发光器件可以包括形成在电路板上的具有芯片接合焊盘的第一导体图案和具有引线接合焊盘的第二导体图案。 半导体发光装置还可以包括安装在芯片焊盘上的半导体发光芯片，第一封装材料，其可以包括波长转换材料以对从芯片发射的光进行波长转换并且可以覆盖芯片 电路板上基本上是公平的圆顶形状，以及覆盖第一封装材料的第二封装树脂，其可以透射从第一封装材料发射的光。 因此，提供了可以发出具有各种色调和良好光学特性的混合光的半导体发光器件，其可以用于照亮在狭窄的展示窗口，自动售货机等中布置的商品。
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公开(公告)号：US09249957B2
公开(公告)日：2016-02-02
申请号：US13837168
申请日：2013-03-15
Applicant: LG INNOTEK CO., LTD.
Inventor： Yeo Chan Yoon , Jae Hwan Jung , Yun Shick Eom , Ki Rok Hur , Jin Seong Kim
CPC classification number: F21V21/00 , H01L25/167 , H01L33/486 , H01L33/62 , H01L2224/45139 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/1301 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
Abstract: Disclosed is a light emitting device. The light emitting device includes: a body including a cavity having first and second inner sides opposite to each other and third and fourth inner sides connected to first and second inner sides and opposite to each other; a first lead frame extending from a bottom of cavity under a first inner side of cavity; a second lead frame extending from the bottom of cavity under a second inner side of cavity; a gap part in the bottom of cavity between first and second lead frames; a light emitting chip on first lead frame; a protective chip on the second lead frame; a recess region recessed outward of body from at least one of third and fourth inner sides of cavity; and a first wire connected to the second frame disposed between light emitting chip and a sidewall of the recess region.
Abstract translation: 公开了一种发光器件。 发光装置包括：主体，其包括具有彼此相对的第一和第二内侧的空腔和连接到第一和第二内侧并且彼此相对的第三和第四内侧; 第一引线框架，其在空腔的第一内侧下方的空腔底部延伸; 第二引线框架，其在空腔的第二内侧下方的空腔底部延伸; 在第一和第二引线框之间的空腔底部的间隙部分; 第一引线框架上的发光芯片; 第二引线框架上的保护芯片; 从腔体的第三内侧和第四内侧的至少一个内侧凹陷的凹部， 以及连接到设置在发光芯片和凹部区域的侧壁之间的第二框架的第一线。
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公开(公告)号：US20160025273A1
公开(公告)日：2016-01-28
申请号：US14338895
申请日：2014-07-23
Applicant: Cree, Inc.
Inventor： Antony Paul van de Ven , Benjamin A. Jacobson
CPC classification number: F21K9/64 , F21K9/23 , F21S8/00 , F21V3/049 , F21V7/0025 , F21V9/30 , F21Y2101/00 , F21Y2103/10 , F21Y2115/10 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: Lighting devices with multiple light-emitting regions may be arranged to transmit or reflect emission portions or beams having different gamut properties, such as different gamut area index or relative gamut values. Different light transmitting surfaces or areas may be arranged to transmit emission portions or light beams having different gamut properties in different directions. Different gamut properties of different beams or emission portions may be produced by different electrically activated emitters and/or light-affecting materials such as notch filters, lumiphoric materials, and/or color pigments. A retrofit element may include a light-affecting (e.g., gamut-altering) material arranged to span across a portion of a light output surface or area of a lighting device and structure arranged for removable attachment to the lighting device.
Abstract translation: 具有多个发光区域的照明装置可以布置成透射或反射具有不同色域特性的发射部分或光束，例如不同的色域面积指数或相对色域值。 可以布置不同的光透射表面或区域以在不同方向上发射具有不同色域特性的发射部分或光束。 不同的光束或发射部分的不同色域特性可以由不同的电活化发射体和/或光影响材料（例如陷波滤光片，荧光材料和/或彩色颜料）产生。 改进元件可以包括布置成横跨照明设备的光输出表面或区域的一部分的光影响（例如，变色区域）材料，以及布置成可移除地附接到照明设备的结构。
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80.发明申请LIGHT EMITTER DEVICES AND METHODS FOR LIGHT EMITTING DIODE (LED) CHIPS 审中-公开用于发光二极管（LED）灯的发光二极管装置和方法
公开(公告)号：US20160013164A1
公开(公告)日：2016-01-14
申请号：US14679948
申请日：2015-04-06
Applicant: Cree, Inc.
Inventor： Florin A. Tudorica , Christopher P. Hussell , Amber C. Abare , Peter Scott Andrews , Sung Chul Joo
IPC: H01L25/075 , H01L33/54 , H01L33/56 , H01L33/50
CPC classification number: H01L25/0753 , H01L24/48 , H01L24/83 , H01L25/167 , H01L33/505 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L2224/45099 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/83192 , H01L2224/83447 , H01L2224/8592 , H01L2224/92247 , H01L2924/00 , H01L2924/00014 , H01L2924/01322 , H01L2924/10156 , H01L2924/12035 , H01L2924/12041 , H01L2933/0041 , H01L2933/005
Abstract: Light emitter devices for light emitting diodes (LED chips) and related methods are disclosed. In one embodiment a light emitter device includes a substrate and a chip on board (COB) array of LED chips disposed over the substrate. A layer having wavelength conversion material provided therein is disposed over the array of LED chips for forming a light emitting surface from which light is emitted upon activation of the LED chips. In some aspects, the wavelength conversion material includes phosphoric or lumiphoric material that is settled and/or more densely concentrated within one or more predetermined portions of the layer. In some aspects, the devices and methods provided herein can comprise a lumen density of approximately 30 lm/mm2 or greater.
Abstract translation: 公开了用于发光二极管（LED芯片）的发光器件和相关方法。 在一个实施例中，发光器件包括衬底和布置在衬底上的LED芯片的板上（COB）阵列。 设置在其中的具有波长转换材料的层设置在LED芯片阵列上，用于形成在LED芯片激活时发光的发光表面。 在一些方面，波长转换材料包括在层的一个或多个预定部分内沉降和/或更密集地聚集的磷酸或荧光材料。 在一些方面，本文提供的装置和方法可以包括大约30lm / mm2或更大的管腔密度。
