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公开(公告)号：US20220336427A1
公开(公告)日：2022-10-20
申请号：US17719323
申请日：2022-04-12
发明人： Jong Min JANG , Sung Hyun LEE
IPC分类号： H01L25/075 , H01L23/00 , H01L33/44 , H01L33/00
摘要： A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.
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公开(公告)号：US11437353B2
公开(公告)日：2022-09-06
申请号：US17096289
申请日：2020-11-12
发明人： Seom Geun Lee , Seong Kyu Jang , Yong Woo Ryu , Jong Hyeon Chae
IPC分类号： H01L25/075 , H01L33/42 , H01L33/62
摘要： A light emitting device including a first LED stack, a second LED stack, and a third LED stack each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the second LED stack, a second planarization layer disposed on the first LED stack, lower buried vias passing through the first planarization layer, the second LED stack, and the first bonding layer and electrically connected to the semiconductor layers of the third LED stack, respectively, and upper buried vias passing through the second planarization layer and the first LED stack, in which a width of an upper end of each of the lower buried vias and the upper buried vias is greater than a width of a corresponding through hole.
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公开(公告)号：US11432474B2
公开(公告)日：2022-09-06
申请号：US17208989
申请日：2021-03-22
发明人： Se Ryung Kim
摘要： A plant cultivation method for increasing the phytochemical content of a Labiatae plant is provided. The plant cultivation method includes cultivating the Labiatae plant in a visible light environment having a dark period and a light period during which the Labiatae plant is exposed to visible light in an alternate manner, and performing treatment with UVB radiation during the light period for at least one day before harvesting. A cumulative dose of the UVB radiation may range from 0.54J/m2 to 4.32 kJ/m2.
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74.发明申请公开(公告)号：US20220262983A1
公开(公告)日：2022-08-18
申请号：US17673068
申请日：2022-02-16
发明人： Chung Hoon LEE , Yong Hyun BAEK , Ji Hun KANG , Dae Hong MIN , Dae Sung CHO , So Ra LEE
摘要： A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).
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公开(公告)号：US20220249714A1
公开(公告)日：2022-08-11
申请号：US17676768
申请日：2022-02-21
发明人： Hee Ho Bae , A Young Lee , Yeong Min Yoon
摘要： A lighting apparatus including a white light emitting device including at least one first light emitting diode and a wavelength converter to implement white light, and at least one second light emitting diode to emit light to sterilize at least one pathogenic microorganism, in which the first light emitting diode emits light having a central wavelength in a range of violet or blue, the second light emitting diode emits light having a central wavelength in a range of about 400 nm to about 420 nm, the wavelength converter includes a plurality of wavelength conversion substances to convert light of the first light emitting diode into white light, and an irradiance of light emitted from the second light emitting diode is configured to be greater than that from the white light emitting device at the same wavelength.
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公开(公告)号：US11411142B2
公开(公告)日：2022-08-09
申请号：US17025273
申请日：2020-09-18
发明人： Jin Woong Lee , Kyoung Wan Kim , Tae Jun Park , Sang Won Woo
摘要： A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
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公开(公告)号：US20220216188A1
公开(公告)日：2022-07-07
申请号：US17569114
申请日：2022-01-05
发明人： Yong Hyun BAEK , Dae Hong MIN , Ji Hun KANG , Chung Hoon LEE
IPC分类号： H01L25/075 , H01L33/50 , H01L33/04 , H01L33/62 , H01L33/48
摘要： A light emitting device and a light emitting module having the same are provided. The light emitting module includes a circuit board and a plurality of light emitting units arranged on the circuit board. Each of the plurality of light emitting units includes a light emitting device. The plurality of light emitting units emits light of different colors from one another.
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公开(公告)号：US11355482B2
公开(公告)日：2022-06-07
申请号：US16200036
申请日：2018-11-26
发明人： Jong Hyeon Chae , Chang Yeon Kim , Ho Joon Lee , Seong Gyu Jang , Chung Hoon Lee , Dae Sung Cho
IPC分类号： H01L25/13 , H01L25/075 , H01L33/00 , H01L27/15 , H01L33/40 , H01L33/50 , H01L33/62 , H01L33/38
摘要： A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a portion of the first LED sub-unit, a third LED sub-unit disposed on a portion of the second LED sub-unit, and a reflective electrode disposed adjacent to the first LED sub-unit, in which each of the first to third LED sub-units comprises an n-type semiconductor layer and a p-type semiconductor layer, each of the n-type semiconductor layers of the first, second, and third LED stacks is electrically connected to the reflective electrode, and the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven.
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公开(公告)号：US20220158031A1
公开(公告)日：2022-05-19
申请号：US17536074
申请日：2021-11-28
发明人： Seong Kyu Jang , Chan Seob Shin , Seom Geun Lee , Ho Joon Lee
IPC分类号： H01L33/24 , H01L33/62 , H01L25/075
摘要： A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.
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公开(公告)号：US20220123184A1
公开(公告)日：2022-04-21
申请号：US17495460
申请日：2021-10-06
发明人： Namgoo CHA
IPC分类号： H01L33/58 , H01L33/62 , H01L25/075
摘要： A unit pixel is provided. The unit pixel includes a transparent substrate, a first light blocking layer disposed on the transparent substrate and having windows that transmit light, an adhesive layer covering the first light blocking layer, a plurality of light emitting devices disposed on the adhesive layer to be arranged on the windows, and a second light blocking layer covering side surfaces of the light emitting devices.
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