公开(公告)号：US4717645A

公开(公告)日：1988-01-05

申请号：US789366

申请日：1985-10-22

Applicant: Yoshihide Kato ,  Kei Kirita ,  Toshiaki Shinozaki ,  Fumiaki Shigemitsu ,  Kinya Usuda ,  Takashi Tsuchiya

Inventor： Yoshihide Kato ,  Kei Kirita ,  Toshiaki Shinozaki ,  Fumiaki Shigemitsu ,  Kinya Usuda ,  Takashi Tsuchiya

IPC: H01L21/30 ,  G03F7/16 ,  G03C5/00

CPC classification number: G03F7/168 ,  Y10S430/168

Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.