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    System and method for determining a subject's stress condition
    71.
    发明授权
    System and method for determining a subject's stress condition 有权

    公开(公告)号：US11160500B2

    公开(公告)日：2021-11-02

    申请号：US16224474

    申请日：2018-12-18

    Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D ,  Stichting IMEC Nederland

    Inventor： Elena Smets ,  Emmanuel Rios Velazquez ,  Giuseppina Schiavone ,  Walter De Raedt ,  Christiaan Van Hoof

    IPC: A61B5/00 ,  G16H50/20 ,  G06N20/00 ,  A61B5/16

    Abstract: Disclosed herein is a system for determining a subject's stress condition. The system includes a stress test unit configured for: receiving features defining the subject and physiological signals sensed from the subject when performing a relaxation and a stressful test task; extracting normalization parameters from the physiological signals; and identifying stress-responsive physiological features. The system also includes a storage unit configured for: storing a plurality of stress models; and storing the subject's features, normalization parameters, and the stress-responsive physiological features. The system also includes a stress detection unit configured for: selecting a stress model from the plurality of stress models based on the subject's features and the stress responsive physiological features; estimating a specific stress condition based on the stress model, stored subject's features, normalization parameters, and physiological signals that apply to the selected stress model; and providing a stress value representative of the subject's stress condition.

    FinFET having locally higher fin-to-fin pitch
    72.
    发明授权
    FinFET having locally higher fin-to-fin pitch 有权

    公开(公告)号：US11114435B2

    公开(公告)日：2021-09-07

    申请号：US15382376

    申请日：2016-12-16

    Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

    Inventor： Geert Hellings ,  Roman Boschke ,  Dimitri Linten ,  Naoto Horiguchi

    IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

    Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to FinFET transistors. In one aspect, at least three fins are arranged to extend in parallel in a first direction and are laterally separated from each other in a second direction by shallow trench isolation structures having a first fin spacing, where at least a portion of each fin protrudes out from a substrate. At least a portion of each of a first fin and a second fin of the at least three fins vertically protrude to a level higher than an upper surface of the shallow trench isolation structures. A third fin is formed laterally between the first fin and the second fin in the second direction, where the third fin has a non-protruding region which extends vertically to a level below or equal to the upper surface of the shallow trench isolation structures.

    DUAL MAGNETIC TUNNEL JUNCTION STACK
    74.
    发明申请
    DUAL MAGNETIC TUNNEL JUNCTION STACK 有权

    公开(公告)号：US20210193912A1

    公开(公告)日：2021-06-24

    申请号：US17119010

    申请日：2020-12-11

    Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

    Inventor： Mohit Gupta ,  Trong Huynh Bao

    IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01F10/32

    Abstract: A material layer stack, a non-volatile memory device comprising the stack, and arrays thereof are described. The material layer stack comprises first and second magnetic tunnel junctions and a first top electrode formed on a top face of the stack. A shoulder is formed on a lateral face of the stack and divides the stack into a lower portion and an upper portion, wherein a tunnel barrier of the first magnetic tunnel junction is comprised by the lower stack portion and a tunnel barrier of the second magnetic tunnel junction by the upper stack portion. A second top electrode is formed on the shoulder. Each magnetic tunnel junction is adapted to store a bit as a reconfigurable magnetoresistance of its magnetic electrodes. Preferably, a bottom face of the stack is connected to a conductor supporting current induced magnetic polarization switching for the first magnetic tunnel junction by spin-orbit torque; magnetic polarization switching for the second magnetic tunnel junction is preferably achieved by spin-transfer torque.

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