公开(公告)号：US09590006B2

公开(公告)日：2017-03-07

申请号：US14985106

申请日：2015-12-30

Applicant: Sony Corporation

Inventor： Yusuke Tanaka

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members.

Abstract translation: 提供了一种固态成像装置，其包括：多个光电转换区域，其对从半导体衬底的背面侧入射的光进行光电转换;形成在以矩阵形状排列的多个光电转换区域之间形成的元件隔离区域， 构件形成在元件隔离区域的上表面上。 元件隔离区具有与杂质浓度高的杂质浓度区域连接至至少一部分屏蔽构件。