公开(公告)号：US10254448B2

公开(公告)日：2019-04-09

申请号：US15194739

申请日：2016-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duhyun Lee ,  Sunil Kim ,  Changgyun Shin ,  Jungwoo Kim ,  Chang bum Lee

IPC: G02B5/00 ,  G02F1/19 ,  G02F1/295 ,  G02F1/29

Abstract: A light modulation device includes a dielectric antenna and a refractive-index-variable layer which faces the dielectric antenna and comprises a material having a refractive index that changes according to a signal. A light may be modulated, since resonance characteristics of the dielectric antenna are controlled according to a refractive-index change of the refractive-index-variable layer.

公开(公告)号：US10180587B2

公开(公告)日：2019-01-15

申请号：US14528394

申请日：2014-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duhyun Lee ,  Byungkyu Lee

IPC: H01L29/06 ,  G02F1/017 ,  G03F7/20

Abstract: A light modulator may include: a light modulating unit formed as a pixel-array type by using a PIN diode including multiple quantum wells including a Group-III nitride semiconductor material, and configured to modulate light by electroabsorption; and/or a control unit including a transistor configured to control voltage applied to the PIN diode of the light modulating unit. The PIN diode and the transistor may be arrayed in an active matrix form.

公开(公告)号：US09703208B2

公开(公告)日：2017-07-11

申请号：US14714245

申请日：2015-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yibing Michelle Wang ,  Duhyun Lee

IPC: G03F7/20 ,  G02F1/017 ,  G02F1/01

CPC classification number: G03F7/70291 ,  G02F1/0121 ,  G02F1/017

Abstract: MQW devices, IC chips and methods may be used in semiconductor lithography patterning systems. An MQW device includes an array of pixels that have transmission elements and associated support circuits. The support circuits have preliminary memory cells and final memory cells. The final memory cells store transmittance values that control transmittances of the associated transmission elements. This way, exposure of a target with a lithography system for purposes of patterning the target may be performed through the transmission elements according to the controlled transmittances, while subsequent transmittance values are being received by the preliminary memory cells from memory banks. The exposure of the target therefore needs to pause for less time, in order to wait for the MQW device to be refreshed with the subsequent transmittance values. Accordingly the whole semiconductor lithography patterning system may operate faster and thus have more throughput.

公开(公告)号：US09606379B2

公开(公告)日：2017-03-28

申请号：US14810861

申请日：2015-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myounghoon Jung ,  Duhyun Lee ,  Byungkyu Lee ,  Yongjoo Kwon ,  Yonghwa Park ,  Seungjun Lee

IPC: G02F1/03 ,  G02F1/00 ,  G02F1/017 ,  G02F1/01 ,  G02F1/015

CPC classification number: G02F1/01716 ,  G02F1/0121 ,  G02F2001/0155 ,  G02F2203/12

Abstract: Disclosed is a light modulating apparatus. The light modulating apparatus includes a pixel array including a plurality of pixels, a light modulating device that absorbs or transmit light incident on the pixel array according to an applied voltage, a flip-flop circuit that outputs a first voltage based on a device driving signal indicating a level of a second voltage applied to be applied to the light modulating device, and an amplifier that amplifies the first voltage to generate the second voltage and applies the second voltage to the light modulating device.