公开(公告)号：US09324759B2

公开(公告)日：2016-04-26

申请号：US14135066

申请日：2013-12-19

Applicant: OmniVision Technologies, Inc.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L31/103 ,  H01L31/107 ,  H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管和第二光电二极管。 第一光电二极管包括第一掺杂区域，第一轻掺杂区域和设置在第一掺杂区域和第一轻掺杂区域之间的第一高掺杂区域。 第二光电二极管具有基本上等于第一光电二极管的第一全阱容量的第二满阱容量。 第二光电二极管包括第二掺杂区域，第二轻掺杂区域和设置在第二掺杂区域和第二轻掺杂区域之间的第二高掺杂区域。 第一光电二极管可用于测量低光，第二光电二极管可用于测量亮光。

公开(公告)号：US20140299925A1

公开(公告)日：2014-10-09

申请号：US13858833

申请日：2013-04-08

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H04N5/335 ,  H04N5/3745

Abstract: Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.

Abstract translation: 改善像素单元中潜在井特性的技术和机制。 在一个实施例中，像素单元的耦合部分将像素单元的复位晶体管耦合到像素单元的浮动扩散节点，复位晶体管复位浮动扩散节点的电压。 在另一个实施例中，像素单元包括屏蔽线，其延伸到耦合部分，屏蔽线将降低复位晶体管对浮动扩散节点的寄生电容。