公开(公告)号：US06242276B1

公开(公告)日：2001-06-05

申请号：US09482528

申请日：2000-01-14

Applicant: Seog-soon Baek ,  Byeoung-ju Ha ,  Young-soo Oh

Inventor： Seog-soon Baek ,  Byeoung-ju Ha ,  Young-soo Oh

IPC: H01L2100

CPC classification number: B81B3/0086 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81C2201/0104 ,  B81C2201/0132

Abstract: A micro inertia sensor fabrication method in which thick silicon bonded to glass is processed at a high sectional ratio, is provided. In this method, silicon is bonded to a glass substrate, the bonded silicon is polished to have a desired thickness, a silicon structure is formed by etching the polished silicon using an RIE method, and the silicon structure is separated from the bottom by selectively etching glass below the silicon structure via grooves in etched silicon. Since the thick silicon bonded to glass is processed at a high sectional ratio, the area and thickness of the silicon to be measured are increased. Also, this method is simple since only one mask is used.

Abstract translation: 提供了以高截面比率处理结合到玻璃上的厚硅的微惯性传感器制造方法。 在该方法中，将硅结合到玻璃基板上，将接合的硅进行抛光以具有所需的厚度，通过使用RIE法蚀刻抛光的硅来形成硅结构，并且通过选择性蚀刻将硅结构与底部分离 通过蚀刻硅中的凹槽，在硅结构下面的玻璃。 由于结合到玻璃上的厚硅以高截面比进行处理，所以要测量的硅的面积和厚度增加。 此外，该方法很简单，因为只使用一个掩模。