公开(公告)号：US08258533B2

公开(公告)日：2012-09-04

申请号：US12950676

申请日：2010-11-19

申请人： Won Cheol Seo ,  Sum Geun Lee

发明人： Won Cheol Seo ,  Sum Geun Lee

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/92247

摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

公开(公告)号：US08242530B2

公开(公告)日：2012-08-14

申请号：US13076330

申请日：2011-03-30

申请人： Won Cheol Seo ,  Yun Goo Kim ,  Chang Youn Kim

发明人： Won Cheol Seo ,  Yun Goo Kim ,  Chang Youn Kim

IPC分类号： H01L29/72

CPC分类号： H01L33/0079 ,  H01L33/387 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.

摘要翻译： 提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

公开(公告)号：US08211724B2

公开(公告)日：2012-07-03

申请号：US12623990

申请日：2009-11-23

申请人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20100244727A1

公开(公告)日：2010-09-30

申请号：US12704881

申请日：2010-02-12

申请人： Kyung Hee YE ,  Hyun Gu Kang ,  Dae Sung Kal ,  Won Cheol Seo

发明人： Kyung Hee YE ,  Hyun Gu Kang ,  Dae Sung Kal ,  Won Cheol Seo

IPC分类号： H05B37/02

CPC分类号： H05B33/0809

摘要： A light-emitting diode (LED) driver used to power at least one LED with an alternating current (AC) voltage source is provided. The LED driver includes a rectifying unit applying N-fold higher voltage than the voltage from the AC voltage source to the LED. The rectifying unit includes a first charging unit to charge a first voltage, and a second charging unit to charge a second voltage. The first voltage includes the voltage at the AC voltage source during a first half-cycle of one AC voltage cycle, and the second voltage includes the first voltage and the voltage at the AC voltage source during the second half-cycle of the AC voltage cycle. Accordingly, the LED driver may improve light-emitting efficiency and reduce flicker of LEDs.

摘要翻译： 提供了用于为交流（AC）电压源至少一个LED供电的发光二极管（LED）驱动器。 LED驱动器包括整流单元，其施加比来自AC电压源的电压高出N倍的电压。 整流单元包括对第一电压充电的第一充电单元和用于对第二电压充电的第二充电单元。 第一电压包括在一个交流电压周期的第一个半周期期间的交流电压源处的电压，并且第二电压在交流电压周期的第二个半周期期间包括第一电压和交流电压源处的电压 。 因此，LED驱动器可以提高发光效率并减少LED的闪烁。

公开(公告)号：US20100163887A1

公开(公告)日：2010-07-01

申请号：US12623990

申请日：2009-11-23

申请人： Kwang Choong KIM ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Kwang Choong KIM ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。