公开(公告)号：US20060223327A1

公开(公告)日：2006-10-05

申请号：US11094559

申请日：2005-03-29

Applicant: Jisoo Kim ,  Sangheon Lee ,  Binet Worsham ,  Robert Charatan ,  S.M. Sadjadi

Inventor： Jisoo Kim ,  Sangheon Lee ,  Binet Worsham ,  Robert Charatan ,  S.M. Sadjadi

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31116

Abstract: A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.

Abstract translation: 提供了一种在衬底上蚀刻电介质层的方法。 在电介质层上形成光致抗蚀剂掩模。 将基板放置在等离子体处理室中。 包含NF 3 N的蚀刻剂气体被提供到等离子体室中。 从NF 3 N气体形成等离子体。 通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。