公开(公告)号：US09773779B2

公开(公告)日：2017-09-26

申请号：US14856813

申请日：2015-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： I-Tseng Chen ,  Hon-Lin Huang ,  Chun-Hsien Huang ,  Yu-Hung Lin

IPC: H01L21/20 ,  H01L27/06 ,  H01L21/8234 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01L21/02271 ,  H01L21/823437 ,  H01L28/20

Abstract: A semiconductor device structure including a resistor layer is provided. The semiconductor device structure includes a gate structure formed over the first region of the substrate and an inter-layer dielectric (ILD) layer formed adjacent to the gate structure. The semiconductor device structure further includes a resistor layer is formed over the ILD layer over the second region of the substrate, and the major structure of the resistor layer is amorphous.