公开(公告)号：US20200043936A1

公开(公告)日：2020-02-06

申请号：US16525780

申请日：2019-07-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Abderrezak MARZAKI ,  Pascal FORNARA

IPC: H01L27/112 ,  H01L23/00 ,  H01L23/525 ,  G11C17/16 ,  G11C17/18

Abstract: An integrated circuit includes at least one antifuse element. The antifuse element is formed from a semiconductor substrate, a trench extending down from a first face of the semiconductor substrate into the semiconductor substrate, a first conductive layer housed in the trench and extending down from the first face of the semiconductor substrate into the semiconductor substrate, a dielectric layer on the first face of the semiconductor substrate, and a second conductive layer on the dielectric layer. A program transistor selectively electrically couples the second conductive layer to a program voltage in response to a program signal. A program/read transistor selectively electrically couples the first conductive layer to a ground voltage in response to the program signal and in response to a read signal. A read transistor selectively electrically couples the second conductive layer to a read amplifier in response to the read signal.

公开(公告)号：US20190172759A1

公开(公告)日：2019-06-06

申请号：US16209044

申请日：2018-12-04

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre SARAFIANOS ,  Abderrezak MARZAKI

IPC: H01L21/66

Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.

公开(公告)号：US20190109100A1

公开(公告)日：2019-04-11

申请号：US16154456

申请日：2018-10-08

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre SARAFIANOS ,  Abderrezak MARZAKI

IPC: H01L23/00 ,  G06F21/87 ,  H04L9/00 ,  G06F21/78 ,  H01L29/06

Abstract: An integrated circuit includes a semiconductor substrate having a rear face. A first semiconductor well within the substrate includes circuit components. A second semiconductor well within the substrate is insulated from the first semiconductor well and the rest of the substrate. The second semiconductor well provides a detection device that is configurable and designed, in a first configuration, to detect a thinning of the substrate via its rear face, and in a second configuration, to detect a DFA attack by fault injection into the integrated circuit.

公开(公告)号：US20190081011A1

公开(公告)日：2019-03-14

申请号：US16129163

申请日：2018-09-12

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre SARAFIANOS ,  Abderrezak MARZAKI

IPC: H01L23/00

CPC classification number: H01L23/576 ,  H01L22/14 ,  H01L22/34 ,  H01L29/0649 ,  H01L29/8613

Abstract: An electronic integrated circuit includes a semiconductor substrate having a rear face. A device for detecting a thinning of the semiconductor substrate via its rear face is formed by a p-n junction that is biased into conduction. Thinning of the substrate is detected by monitoring a current flowing through the p-n junction, and comparing that current to a threshold. In the event the compared current indicates no thinning of the semiconductor substrate, the circuitry for biasing and comparing is deactivated.