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公开(公告)号：US20240276713A1
公开(公告)日：2024-08-15
申请号：US18537987
申请日：2023-12-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonil Lee , Kyunghwan Lee , Juho Lee
IPC: H10B12/00 , H01L29/423 , H01L29/788
CPC classification number: H10B12/485 , H01L29/42324 , H01L29/7889 , H10B12/315 , H10B12/482 , H10B12/488
Abstract: A semiconductor memory device includes a memory cell that extends in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction. The memory cell includes a first transistor including a first channel structure, a second transistor including a second channel structure, a charge storage element electrically connected to a first end of the second channel structure and adjacent to the first channel structure a first bit line electrically connected to a first end of the first channel structure and that extends in the second horizontal direction, a selection line electrically connected to a second end of the first channel structure and that extends in the second horizontal direction, a second bit line electrically connected to a second end of the second channel structure and that extends in the second horizontal direction, and a gate line that extends in the vertical direction.
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公开(公告)号：US20240276703A1
公开(公告)日：2024-08-15
申请号：US18517126
申请日：2023-11-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wonsok Lee , Juho Lee , Seunghyun Kim , Wooje Jung , Minhee Cho
IPC: H10B12/00
CPC classification number: H10B12/315 , H10B12/033 , H10B12/05
Abstract: A semiconductor memory device, which may include a substrate, a lower conductive line on the substrate, an isolation insulating layer on the lower conductive line and including a channel trench, a channel structure inside the channel trench and including a first oxide semiconductor material, an interfacial conductive pattern between the lower conductive line and a lower surface of the channel structure, a gate dielectric layer that covers the channel structure within the channel trench, an upper conductive line on the gate dielectric layer within the channel trench, a conductive contact pattern on the channel structure, an interfacial oxide semiconductor pattern between the channel structure and the conductive contact pattern and including a second oxide semiconductor material, and a capacitor structure including a lower electrode connected to the conductive contact pattern.
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公开(公告)号：US11770285B2
公开(公告)日：2023-09-26
申请号：US17775734
申请日：2020-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyoungju Ji , Juho Lee , Younsun Kim , Hoondong Noh
CPC classification number: H04L27/2636 , H04L1/0023 , H04L27/206 , H04L27/3411 , H04L27/3483
Abstract: Provided are a method and apparatus for transmitting data in a wireless communication system. The method, performed by a transmission apparatus, of transmitting data includes performing π/2-binary phase shift keying (BPSK) modulation on M symbols, performing a discrete Fourier transform (DFT) on the M symbols on which the π/2-BPSK modulation has been performed, performing an inverse fast Fourier transform (IFFT) on M/2 symbols among the M symbols on which the DFT has been performed, and transmitting, to a reception apparatus, the M/2 symbols on which the IFFT has been performed, wherein a constellation of the M symbols on which the π/2-BPSK modulation has been performed may have only real components or imaginary components.
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公开(公告)号：US11563526B2
公开(公告)日：2023-01-24
申请号：US17055348
申请日：2019-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongho Yeo , Younsun Kim , Sungjin Park , Jinyoung Oh , Taehan Bae , Juho Lee
Abstract: Disclosed is a 5th generation (5G) or a pre-5G communication system for supporting a data transmission rate higher than that of a 4th generation (4G) communication system such as long term evolution (LTE). An apparatus and a method for performing retransmission in a wireless communication system are provided. A method for operating a transmitting device in a wireless communication system, according to various embodiments of the present disclosure, comprises the steps of: transmitting a plurality of data code blocks (CBs) to at least one receiving device in an initial transmission step; receiving, from the at least one receiving device, feedback information including information for indicating the number of data CBs, from among the plurality of data CBs, for which decoding has failed; and transmitting the number of parity CBs, determined on the basis of the number of data CBs for which the decoding has failed, to the at least one receiving device in a retransmission step. Therefore, the resources required for retransmission can be reduced.
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公开(公告)号：US11528109B2
公开(公告)日：2022-12-13
申请号：US17045369
申请日：2018-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyojin Lee , Byungju Lee , Juho Lee , Younsun Kim , Junghyun Kim , Sangyeob Jung
Abstract: Disclosed are: a communication technique for merging, with IoT technology, a 5G communication system for supporting a data transmission rate higher than that of a 4G system; and a system therefor. The present disclosure can be applied to intelligent services (for example, smart home, smart building, smart city, smart car or connected car, healthcare, digital education, retail, security, and safety-related services, and the like) on the basis of 5G communication technology and IoT-related technology. Disclosed are a method and an apparatus for transmitting a signal by using a non-orthogonal frequency division multiplexing (NOFDM) scheme and, particularly, the present invention presents a method and an apparatus for transmitting a control signal and a reference signal by using an OFDM scheme and for transmitting data by using the NOFDM scheme.
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公开(公告)号：US11489565B2
公开(公告)日：2022-11-01
申请号：US17366553
申请日：2021-07-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younsun Kim , Hyojin Lee , Hyoungju Ji , Juho Lee , Joonyoung Cho
IPC: H04B7/02 , H04B7/0417 , H04B7/06 , H04L5/00 , H04B7/0456
Abstract: A method by a terminal, a method by a base station, a terminal, and a base station are provided. The method by the terminal includes receiving a first channel state information reference signal (CSI-RS) and a second CSI-RS from a base station; generating channel state information (CSI) based on both the first CSI-RS and the second CSI-RS; and reporting the CSI to the base station, wherein the CSI includes a rank indicator (RI) and a channel quality indicator (CQI).
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47.发明授权
公开(公告)号：US11463996B2
公开(公告)日：2022-10-04
申请号：US16847255
申请日：2020-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seunghoon Choi , Youngbum Kim , Taehyoung Kim , Juho Lee
Abstract: The present disclosure discloses a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method of receiving uplink control information in a communication system. The method includes identifying a resource for receiving the uplink control information on a first uplink control channel from a terminal, transmitting first information associated with the resource to the terminal, transmitting second information associated with the resource to the terminal, and receiving the uplink control information on the uplink control channel based on the first information and the second information from the terminal.
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公开(公告)号：US11328903B2
公开(公告)日：2022-05-10
申请号：US17099156
申请日：2020-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaewon Jeong , Daebeom Lee , Juho Lee , Junghyun Cho
IPC: H01J37/32 , H01L21/3065
Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.
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公开(公告)号：US11206102B2
公开(公告)日：2021-12-21
申请号：US16724070
申请日：2019-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehyoung Kim , Jinkyu Kang , Youngbum Kim , Juho Lee , Seunghoon Choi
Abstract: A communication technique for convergence of IoT technology and a 5G communication system for supporting a higher data transfer rate beyond a 4G system, and a system therefor. The disclosure can be applied to intelligent services (e.g., smart homes, smart buildings, smart cities, smart or connected cars, health care, digital education, retail business, and services associated with security and safety) based on 5G communication technology and IoT-related technology. According to the disclosure, a method of a terminal of a wireless communication system includes: identifying k′ corresponding to a slot offset value based on a time-domain resource allocation table configured for the terminal; receiving, from a base station, a physical downlink control channel (PDCCH) signal for scheduling data transmission in a k-th slot; and blind-decoding the received PDCCH signal in a (k+k′)-th slot, wherein k′ corresponds to a minimum value among slot offset values configured as the time-domain resource allocation table.
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公开(公告)号：US11190240B2
公开(公告)日：2021-11-30
申请号：US14822519
申请日：2015-08-10
Applicant: Samsung Electronics Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
Inventor： In Ho Lee , Cheol Mun , Juho Lee , Jin Kyu Han , Jong Gwan Yook
IPC: H04B7/0417 , H04B7/06 , H04W88/08
Abstract: A method and an apparatus are provided for transmitting channel state information (CSI) by a terminal in a communication system. The method includes receiving a first signal from a first serving cell; receiving a second signal from a second serving cell; calculating first CSI for the first serving cell based on the first signal; calculating second CSI for the first serving cell based on the first signal; calculating first CSI for the second serving cell based on the second signal; calculating second CSI for the second serving cell based on the second signal; transmitting the first CSI and the second CSI for the first serving cell respectively; and transmitting the first CSI and the second CSI for the second serving cell respectively.
