公开(公告)号：US20210020413A1

公开(公告)日：2021-01-21

申请号：US16928220

申请日：2020-07-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Hua Chung ,  Bin Dong ,  Xinliang Lu ,  Haichun Yang ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/311

Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.

公开(公告)号：US20200075313A1

公开(公告)日：2020-03-05

申请号：US16534149

申请日：2019-08-07

Applicant: Mattson Technology, Inc.

Inventor： Jin J. Wang ,  Hua Chung

IPC: H01L21/02

Abstract: Systems and processes for oxide removal from titanium nitride surfaces are provided. In one example implementation, A method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece can have a titanium nitride layer. The method can include performing a plasma-based oxide removal process on the titanium nitride layer. The plasma-based oxide removal process can include: generating one or more species by inducing a plasma in a process gas with a plasma source; and exposing the workpiece to species generated in the plasma. The process gas can include a mixture of a first gas and a second gas. The first gas can include one or more of a hydrogen containing gas and a nitrogen containing gas. The second gas can include a fluorine containing gas.

公开(公告)号：US10354883B2

公开(公告)日：2019-07-16

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/30 ,  H01L21/02 ,  C23C16/452 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US11791181B2

公开(公告)日：2023-10-17

申请号：US17024851

申请日：2020-09-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Hua Chung ,  Haochen Li ,  Xinliang Lu ,  Shawming Ma ,  Haichun Yang ,  Michael X. Yang

IPC: H01L21/67 ,  H01L21/223 ,  H01L21/321 ,  H01L21/30

CPC classification number: H01L21/67213 ,  H01L21/2236 ,  H01L21/3003 ,  H01L21/321

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

公开(公告)号：US11251050B2

公开(公告)日：2022-02-15

申请号：US16904669

申请日：2020-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

公开(公告)号：US20210366727A1

公开(公告)日：2021-11-25

申请号：US17326945

申请日：2021-05-21

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Michael X. Yang

IPC: H01L21/3213

Abstract: Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.

公开(公告)号：US20210257196A1

公开(公告)日：2021-08-19

申请号：US17225547

申请日：2021-04-08

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shawming Ma ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Ryan M. Pakulski

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/311

Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.

公开(公告)号：US10950428B1

公开(公告)日：2021-03-16

申请号：US16556938

申请日：2019-08-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Hua Chung ,  Xinliang Lu ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/02 ,  H01J37/32 ,  C23C8/24 ,  C23C8/36

Abstract: Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.

公开(公告)号：US20210005456A1

公开(公告)日：2021-01-07

申请号：US16916849

申请日：2020-06-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Tsai Wen Sung ,  Chun Yan ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Peter J. Lembesis

IPC: H01L21/033 ,  H01L21/311

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.

公开(公告)号：US20200373129A1

公开(公告)日：2020-11-26

申请号：US16878661

申请日：2020-05-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/02

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.