公开(公告)号：US20150348996A1

公开(公告)日：2015-12-03

申请号：US14435110

申请日：2014-08-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei QIN ,  Xiang LIU ,  Heecheol KIM

IPC: H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1214 ,  G02F1/1368 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present disclosure provides a method for manufacturing an oxide thin film transistor (TFT) array substrate. Specifically the step of forming the thin film transistors may include: forming a pattern of an oxide semiconductor layer on the substrate with photoresist is reserved on the channel regions in the pattern of the oxide semiconductor layer; and forming a source-drain metal layer on the pattern of the oxide semiconductor layer, forming patterns that include source electrodes and drain electrodes by an etching process, and removing the photoresist reserved on the channel regions in the pattern of the oxide semiconductor layer.

Abstract translation: 本发明提供一种制造氧化物薄膜晶体管（TFT）阵列基板的方法。 具体地，形成薄膜晶体管的步骤可以包括：在氧化物半导体层的图案的沟道区域上保留用光致抗蚀剂在衬底上形成氧化物半导体层的图案; 并且在氧化物半导体层的图案上形成源极 - 漏极金属层，通过蚀刻工艺形成包括源电极和漏电极的图案，并且去除在氧化物半导体层的图案中保留在沟道区上的光致抗蚀剂。