公开(公告)号：US20140273489A1

公开(公告)日：2014-09-18

申请号：US14246952

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140273481A1

公开(公告)日：2014-09-18

申请号：US14246937

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140273406A1

公开(公告)日：2014-09-18

申请号：US14248143

申请日：2014-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/677 ,  H01L21/306 ,  H01L21/263

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140179111A1

公开(公告)日：2014-06-26

申请号：US13791125

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。