公开(公告)号：US10535527B2

公开(公告)日：2020-01-14

申请号：US16028855

申请日：2018-07-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Yi Xu ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Vikash Banthia ,  Mei Chang ,  Kazuya Daito

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/42

Abstract: A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate.