公开(公告)号：US11680915B2

公开(公告)日：2023-06-20

申请号：US17804599

申请日：2022-05-30

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Charles Larson ,  Kavita Shah ,  Wei T Lee

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

CPC classification number: G01N23/2273 ,  C23C16/06 ,  C23C16/24 ,  C23C16/45529 ,  C23C16/52 ,  H01L21/67253

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US11346795B2

公开(公告)日：2022-05-31

申请号：US16949041

申请日：2020-10-09

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Charles Thomas Larson ,  Kavita Shah ,  Wei Ti Lee

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US20210372787A1

公开(公告)日：2021-12-02

申请号：US17303834

申请日：2021-06-08

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath POIS ,  Wei T. LEE ,  Lawrence BOT ,  Michael KWAN ,  Mark KLARE ,  Charles LARSON

IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US10801978B2

公开(公告)日：2020-10-13

申请号：US16351153

申请日：2019-03-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Charles Thomas Larson ,  Kavita Shah ,  Wei Ti Lee

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US20200088656A1

公开(公告)日：2020-03-19

申请号：US16686953

申请日：2019-11-18

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/201

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US20190385831A1

公开(公告)日：2019-12-19

申请号：US16557197

申请日：2019-08-30

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. REED ,  Bruno W. SCHUELER ,  Bruce H. NEWCOME ,  Rodney SMEDT ,  Chris BEVIS

IPC: H01J49/14 ,  H01L21/66 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US10481112B2

公开(公告)日：2019-11-19

申请号：US16181287

申请日：2018-11-05

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/20 ,  G01N23/201 ,  H01L21/66

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US10119925B2

公开(公告)日：2018-11-06

申请号：US15451104

申请日：2017-03-06

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/201 ,  H01L21/66

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US12281893B2

公开(公告)日：2025-04-22

申请号：US18668048

申请日：2024-05-17

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath Pois ,  Wei Ti Lee ,  Laxmi Warad ,  Dmitry Kislitsyn ,  Parker Lund ,  Benny Tseng ,  James Chen ,  Saurabh Singh

IPC: G01B15/02 ,  G01N23/2273 ,  H01L21/66

Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

公开(公告)号：US11996259B2

公开(公告)日：2024-05-28

申请号：US17754998

申请日：2020-10-22

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruce H. Newcome ,  Bruno W. Schueler

IPC: H01J35/08 ,  G01N23/20008 ,  G01N23/207 ,  G01N23/2208 ,  G01N23/223 ,  H01J35/24

CPC classification number: H01J35/112 ,  G01N23/20008 ,  G01N23/207 ,  G01N23/2208 ,  G01N23/223 ,  H01J35/24 ,  G01N2223/045 ,  G01N2223/052 ,  G01N2223/056 ,  G01N2223/072 ,  G01N2223/076 ,  G01N2223/085 ,  G01N2223/1016 ,  G01N2223/204 ,  G01N2223/611 ,  H01J2235/081 ,  H01J2235/084 ,  H01J2235/086 ,  H01J2235/1204 ,  H01J2235/1291

Abstract: The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.