公开(公告)号：US06737678B2

公开(公告)日：2004-05-18

申请号：US10188369

申请日：2002-07-03

Applicant: Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shigetoshi Ito ,  Susumu Omi

Inventor： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shigetoshi Ito ,  Susumu Omi

IPC: H01L2715

CPC classification number: H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

Abstract: In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the direction of the wafer, and are formed in the shape of broken lines in the direction of the wafer.

Abstract translation: 在具有形成在GaN基基板250上的LD结构251的晶片中，通过用金刚石针从LD结构251的上方划线而在其表面上形成解理引导槽252。 解理引导槽252沿着平行于晶片的<1-100>方向形成的条形波导253形成一个，并且在晶片的<11-20>方向上形成为虚线的形状 。