公开(公告)号：US20180158851A1

公开(公告)日：2018-06-07

申请号：US15866745

申请日：2018-01-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-Hung Lee ,  Chia-Pin Cheng ,  Fu-Cheng Chang ,  Volume Chien ,  Ching-Hung Kao

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. An isolation feature is disposed in the semiconductor substrate to define a pixel region and a periphery region of the semiconductor substrate. A transistor gate is formed on the semiconductor substrate in the pixel region, in which the transistor gate has a first sidewall and a second sidewall opposite to the first sidewall. A photodiode is disposed in the semiconductor substrate and adjacent to the second sidewall of the transistor gate. A patterned spacer layer is formed on the photodiode and on the transistor gate. The patterned spacer layer includes a first sidewall spacer on the first sidewall of the transistor gate, and a protective structure covering the photodiode and a top surface of the transistor gate.