Epitaxial layer-bearing wafer of rare earth gallium garnet for MSW device
    31.
    发明授权
    Epitaxial layer-bearing wafer of rare earth gallium garnet for MSW device 失效
    用于MSW设备的稀土镓石榴石的外延层承载晶片

    公开(公告)号:US4968954A

    公开(公告)日:1990-11-06

    申请号:US353796

    申请日:1989-05-18

    IPC分类号: H01F10/24 H03B9/14 H03H2/00

    摘要: An improved epitaxial single crystal wafer suitable as a working element of magnetostatic wave devices is proposed which comprises a substrate single crystal wafer of a rare earth gallium garnet, e.g., gadolinium gallium garnet, neodymium gallium garnet and samarium gallium garnet, and an epitaxial layer formed thereon having a chemical composition, different from conventional yttrium iron garnet, Y.sub.3 Fe.sub.5 O.sub.12, of the formula(Y.sub.1-x M.sub.x).sub.a Fe.sub.8-a O.sub.12 or (Y.sub.1-x M.sub.x).sub.a (Fe.sub.1-Y Q.sub.y).sub.8-a O.sub.12,in which M is an element selected from the group consisting of bismuth, lanthanum, gadolinium and lutetium, the subscript a is a positive number in the range from 3.0 to 3.1, the subscript x is a positive number in the range from 0.01 to 0.9, Q is an element selected from the group consisting of aluminum, gallium, indium and scandium and the subscript y is a positive number in the range from 0.1 to 0.2. These epitaxial wafers are advantageous in respect of the greatly decreased problem of mismatching in the lattice constants between the substrate and the epitaxial layer.

    摘要翻译: 提出了一种适合作为静磁波器件的工作元件的改进的外延单晶晶片,其包括稀土镓石榴石的衬底单晶晶片,例如钆镓石榴石,钕镓石榴石和钐镓石榴石,以及形成的外延层 (Y1-xMx)aFe8-aO12或(Y1-xMx)a(Fe1-YQy)8-aO12的化学成分不同于常规的钇铁石榴石Y3Fe5O12,其中M是选自 由铋,镧,钆和镥构成的组,下标a为3.0〜3.1的正数,下标x为0.01〜0.9的正数,Q为选自 由铝,镓,铟和钪组成,下标y为0.1〜0.2的正数。 这些外延晶片对于衬底和外延层之间的晶格常数不匹配的大大降低的问题是有利的。