SEMICONDUCTOR MEMORY DEVICE OF 2T-1C STRUCTURE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230101700A1

    公开(公告)日:2023-03-30

    申请号:US17881747

    申请日:2022-08-05

    Abstract: A semiconductor memory device may include first and second bit lines spaced apart from each other, an interlayer insulating layer covering the first and second bit lines and including a groove extending to cross both of the first and second bit lines, a first channel pattern connected to the first bit line and in contact with an inner side surface of the groove and covering a top surface of the interlayer insulating layer, a second channel pattern connected to the second bit line and in contact with an opposite inner side surface of the groove and covering the top surface of the interlayer insulating layer, a word line in the groove, first and second electrodes on the interlayer insulating layer and in contact with the first and second channel patterns, respectively, and a dielectric layer between the first and second electrodes.

    ELECTRONIC APPARATUS TRAINING INDIVIDUAL MODEL OF USER AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20220004874A1

    公开(公告)日:2022-01-06

    申请号:US17480859

    申请日:2021-09-21

    Abstract: A method and an electronic apparatus for training a personal model of a user are provided. The method includes obtaining first information including personal data of the user represented as a first constituent element of the personal model; obtaining second information including group data of a plurality of users in a group to which the user belongs, represented as a second constituent element of the personal model; determining a first weight value and a second weight value to be respectively applied to the first information and the second information based on reliability of the first information; and training the personal model based on the first information and the second information to which the first weight value and the second weight value are respectively applied.

    SEMICONDUCTOR MEMORY DEVICE
    33.
    发明申请

    公开(公告)号:US20210225842A1

    公开(公告)日:2021-07-22

    申请号:US16999378

    申请日:2020-08-21

    Abstract: A semiconductor memory device may include a first electrode and a second electrode, which are spaced apart from each other in a first direction, and a first semiconductor pattern, which is in contact with both of the first and second electrodes. The first semiconductor pattern may include first to fourth sub-semiconductor patterns, which are sequentially disposed in the first direction. The first and fourth sub-semiconductor patterns may be in contact with the first and second electrodes, respectively. The first and third sub-semiconductor patterns may be of a first conductivity type, and the second and fourth sub-semiconductor patterns may be of a second conductivity type different from the first conductivity type. Each of the first to fourth sub-semiconductor patterns may include a transition metal and a chalcogen element.

    ELECTRONIC DEVICE COMPRISING PLURALITY OF BATTERIES, AND OPERATING METHOD THEREOF

    公开(公告)号:US20250132588A1

    公开(公告)日:2025-04-24

    申请号:US18990356

    申请日:2024-12-20

    Inventor: Kyunghwan LEE

    Abstract: An electronic device includes: first and second batteries; a charging circuit to supply power to the first battery through a first path and supply power to the second battery through a second path; and a processor to control the charging circuit to generate a current corresponding to a sum of a first threshold current of the first battery and a second threshold current of the second battery based on power received from a power transmitter, control the charging circuit to supply a first current to the first battery through the first path and supply a second current to the second battery through the second path based on the current, identify the second current supplied to the second battery, and control the charging circuit such that the magnitude of the second current supplied to the second battery is reduced based on the second current exceeding the second threshold current.

    HOME APPLIANCE
    39.
    发明公开
    HOME APPLIANCE 审中-公开

    公开(公告)号:US20240169941A1

    公开(公告)日:2024-05-23

    申请号:US18370128

    申请日:2023-09-19

    Abstract: A home appliance including a main body; and a door to open and close the main body; and an electrophoretic display (EPD) panel on the door and including a plate to cover a portion of the door and to allow light to pass through, a first electrode configured to allow light pass through and a second electrode between the plate and the door, and an electrophoretic layer between the first electrode and the second electrode, and including a color cell in which first charged particles having a first color, and second charged particles having a second color are accommodated, the first charged particles and the second charged particles being flowable within the color cell, the second charged particles have a different charge than the first charged particles.

    THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240107774A1

    公开(公告)日:2024-03-28

    申请号:US18321243

    申请日:2023-05-22

    CPC classification number: H10B51/20 H10B51/30 H10B51/40

    Abstract: A semiconductor memory device includes first through structures on a substrate, the first through structures arranged in a first direction, an electrode adjacent to the first through structures and extending horizontally in the first direction along the first through structures, and a ferroelectric layer interposed between the electrode and the first through structures. Each of the first through structures includes a first conductive pillar and a second conductive pillar spaced apart from each other in the first direction, a channel layer extending from a sidewall of the first conductive pillar to a sidewall of the second conductive pillar, the channel layer interposed between the ferroelectric layer and the first and second conductive pillars, the first and second conductive pillars being spaced apart from each other in the first direction and defining a first air gap. Adjacent ones of the first through structures define a second air gap.

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