公开(公告)号：US20210155647A1

公开(公告)日：2021-05-27

申请号：US17032120

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung Lee ,  Yoonhyun Kwak ,  Juhyun KIM ,  Sangho Park ,  Sunghun Lee ,  Jeoungin Yi

IPC: C07F15/00 ,  H01L51/00

Abstract: Provided are an organometallic compound represented by Formula 1, an organic light-emitting device including the organometallic compound, and a diagnostic composition including the organometallic compound: M(L1)n1(L2)n2  Formula 1 wherein, in Formula 1, M, L1, L2, n1 and n2 may each be understood by referring to the descriptions thereof provided herein.

公开(公告)号：US20200168664A1

公开(公告)日：2020-05-28

申请号：US16442991

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsun Noh ,  Juhyun KIM ,  Whankyun KIM

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02

Abstract: Provided are magnetic memory devices and method of fabricating the same. The magnetic memory device includes a magnetic tunnel junction pattern disposed on a substrate and including a free layer, a tunnel barrier layer and a pinned layer which are sequentially stacked, and a first spin-orbit torque (SOT) line being in contact with a first sidewall of the free layer of the magnetic tunnel junction pattern.

公开(公告)号：US20190153008A1

公开(公告)日：2019-05-23

申请号：US16031443

申请日：2018-07-10

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Changho NOH ,  Wataru SOTOYAMA ,  Wook KIM ,  Juhyun KIM ,  Sangho PARK ,  Satoko ISHIBE ,  Hasup LEE ,  Dmitry KRAVCHUK

IPC: C07F15/00 ,  H01L51/50 ,  H01L51/00

Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.

公开(公告)号：US20180226575A1

公开(公告)日：2018-08-09

申请号：US15943698

申请日：2018-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyun KIM ,  Kiwoong KIM ,  Sechung OH ,  Woochang LIM

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.