公开(公告)号：US20210020413A1

公开(公告)日：2021-01-21

申请号：US16928220

申请日：2020-07-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Hua Chung ,  Bin Dong ,  Xinliang Lu ,  Haichun Yang ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/311

Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.

公开(公告)号：US10354883B2

公开(公告)日：2019-07-16

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/30 ,  H01L21/02 ,  C23C16/452 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US11791181B2

公开(公告)日：2023-10-17

申请号：US17024851

申请日：2020-09-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Hua Chung ,  Haochen Li ,  Xinliang Lu ,  Shawming Ma ,  Haichun Yang ,  Michael X. Yang

IPC: H01L21/67 ,  H01L21/223 ,  H01L21/321 ,  H01L21/30

CPC classification number: H01L21/67213 ,  H01L21/2236 ,  H01L21/3003 ,  H01L21/321

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

公开(公告)号：US11251050B2

公开(公告)日：2022-02-15

申请号：US16904669

申请日：2020-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

公开(公告)号：US10950428B1

公开(公告)日：2021-03-16

申请号：US16556938

申请日：2019-08-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Hua Chung ,  Xinliang Lu ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/02 ,  H01J37/32 ,  C23C8/24 ,  C23C8/36

Abstract: Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.

公开(公告)号：US20200373129A1

公开(公告)日：2020-11-26

申请号：US16878661

申请日：2020-05-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/02

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

公开(公告)号：US20200350161A1

公开(公告)日：2020-11-05

申请号：US16861900

申请日：2020-04-29

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/02

Abstract: Processes for selective deposition of material on a workpiece are provided. In one example, the method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has a first material and a second material. The second material is different from the first material. The method includes performing an organic radical based surface treatment process on the workpiece to modify an adsorption characteristic of the first material selectively relative to the second material such that the first material has a first adsorption characteristic and the second material has a second adsorption characteristic. The second adsorption characteristic being different from the first adsorption characteristic. The method includes performing a deposition process on the workpiece such that a material is selectively deposited on the first material relative to the second material.

公开(公告)号：US10804109B2

公开(公告)日：2020-10-13

申请号：US15958635

申请日：2018-04-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  C23C16/452 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  B01D67/00 ,  C23F1/12 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/768 ,  C23F4/00

Abstract: Surface treatment processes for treating low-k dielectric materials are provided. One example implementation can include a method for processing a workpiece. The workpiece can include a silicon and carbon containing film material. The method can include treating the workpiece with a surface treatment process. The surface treatment process can include generating one or more species in a first chamber; mixing one or more hydrocarbon molecules with the species to create a mixture comprising one or more organic radicals; and exposing the silicon and carbon containing layer on the workpiece to the mixture in a second chamber.

公开(公告)号：US20200185216A1

公开(公告)日：2020-06-11

申请号：US16522193

申请日：2019-07-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

公开(公告)号：US20190304793A1

公开(公告)日：2019-10-03

申请号：US16444146

申请日：2019-06-18

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/3213 ,  B01D67/00 ,  H01L21/302 ,  C23C16/452 ,  H01L21/311 ,  C23F1/12 ,  H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  H01L21/027

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.