公开(公告)号：US20180308996A1

公开(公告)日：2018-10-25

申请号：US15961006

申请日：2018-04-24

Applicant: LG ELECTRONICS INC.

Inventor： Jinhee PARK ,  Soohyun KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0735

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The method for fabricating a compound semiconductor solar cell comprises forming a first mask layer on a front surface of a compound semiconductor layer of a second region which is a region other than a first region where the front electrode is to be formed; forming a seed metal layer on the front surface of the compound semiconductor layer of the first region and on the first mask layer of the second region; removing the seed metal layer over the first mask layer and the first mask layer; removing a part of the compound semiconductor layer of the second region from the front surface of the compound semiconductor layer by using the seed metal layer of the first region as a mask; forming a second mask layer on the compound semiconductor layer of the second region; forming an electrode metal layer on the seed metal layer not covered by the second mask layer; and removing the second mask layer.

公开(公告)号：US20180301576A1

公开(公告)日：2018-10-18

申请号：US15949679

申请日：2018-04-10

Applicant: LG ELECTRONICS INC.

Inventor： Jinhee PARK ,  Soohyun KIM

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/18

Abstract: A method for manufacturing a compound solar cell includes forming a rear electrode including a first electrode layer directly contacting a rear surface of a compound semiconductor layer and a second electrode layer positioned on a rear surface of the first electrode layer and formed of a material different from the first electrode layer, and forming a plurality of front electrodes on a front surface of the compound semiconductor layer, forming a plurality of first etch stop layers covering the plurality of front electrodes, and a second etch stop layer covering the front edge portions and the side surfaces of the compound semiconductor layers, etching a portion of the compound semiconductor layer not covered by the plurality of first etch stop layer from the front surface to the rear surface of the compound semiconductor layer, and scribing the rear electrode at a portion where the compound semiconductor layer is removed.

公开(公告)号：US20170238778A1

公开(公告)日：2017-08-24

申请号：US15436093

申请日：2017-02-17

Applicant: LG ELECTRONICS INC.

Inventor： Hwang KIM ,  Sungil PARK ,  Soohyun KIM ,  Byungho YOON ,  Sanghoon HAN ,  Youngjun JEON

IPC: A47L9/28 ,  B25J13/08 ,  A47L9/00 ,  B62D61/12

CPC classification number: A47L9/2852 ,  A47L9/009 ,  A47L9/2805 ,  A47L9/2857 ,  A47L9/2873 ,  A47L9/2884 ,  A47L9/2894 ,  A47L2201/022 ,  A47L2201/04 ,  B25J13/085 ,  B62D61/12

Abstract: A moving robot includes a main body, a drive assembly moving the main body, and a cleaner head performing cleaning on a cleaning area in which the main body is positioned, wherein the drive assembly includes a main wheel, a motor generating a driving force, a gear box connected to the main wheel and the motor and transferring the driving force from the motor to the main wheel, and a leg member disposed on a shaft connecting the main wheel and the gear box and providing thrust independently of the main wheel.