公开(公告)号：US20140161976A1

公开(公告)日：2014-06-12

申请号：US13905666

申请日：2013-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Ji-Young OH ,  Sang Chul LIM ,  Seongdeok AHN ,  Chan Woo PARK ,  Jae Bon KOO

IPC: C09D11/00

CPC classification number: C09D11/52

Abstract: Disclosed are methods of forming a core-shell nano particle for a metal ink. The method includes forming a metal oxide nano particle core, and forming a metal shell on a surface of the metal oxide nano particle core to form a core-shell nano particle.

Abstract translation: 公开了形成金属墨水的核 - 壳纳米粒子的方法。 该方法包括形成金属氧化物纳米颗粒芯，并在金属氧化物纳米颗粒芯的表面上形成金属壳以形成核 - 壳纳米颗粒。

公开(公告)号：US20140084283A1

公开(公告)日：2014-03-27

申请号：US13757699

申请日：2013-02-01

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Chul LIM ,  Ji-Young OH ,  Seongdeok AHN ,  Kyoung Ik CHO ,  Sang Seok LEE ,  Jae Bon KOO

IPC: H01L29/26

CPC classification number: H01L29/263 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极，形成与栅电极相邻的有源层，并具有氧化物半导体，在有源层上形成氧供给层，在栅极电极 有源层，形成耦合到有源层的源电极和漏电极，形成覆盖栅电极和栅电介质的平坦化层，形成暴露有源层的孔，并在气氛中对平坦化层进行热处理工艺 的氧气。