Abstract:
A robot control apparatus for controlling a robot manipulating a target object includes a measurement unit configured to measure a change of a gripping unit configured to grip the target object when the gripping unit contacts the target object, a first acquisition unit configured to acquire the change of the gripping unit measured by the measurement unit, a second acquisition unit configured to acquire a gripping state, which is a state of gripping of the target object by the gripping unit, based on the change of the gripping unit acquired by the first acquisition unit, and a control unit configured to control an action of the robot based on the gripping state acquired by the second acquisition unit.
Abstract:
A stitch imaging system, which uses a plurality of radiographic imaging units, includes an information acquisition unit configured to acquire information indicating a layout relationship among the plurality of radiographic imaging units, and a correction unit configured to correct a radiographic image or radiographic images acquired from at least one of the plurality of radiographic imaging units specified based on the information indicating the layout relationship, based on correction data specified based on the information indicating the layout relationship.
Abstract:
A solid-state image pickup element includes a pixel and a signal detecting unit. The pixel has at least two photoelectric conversion units including a first photoelectric conversion unit and a second photoelectric conversion unit in a semiconductor. The first photoelectric conversion unit has a higher impurity density than the second photoelectric conversion unit and is configured to allow the transfer of a charge occurring in the second photoelectric conversion unit to the first photoelectric conversion unit. The signal detecting unit commonly detects the charge amount in the first photoelectric conversion unit and the second photoelectric conversion unit.
Abstract:
A solid-state image sensor including a plurality of pixels each including a photoelectric conversion element formed on a semiconductor. The solid-state image sensor includes a distance measurement pixel including a plurality of photoelectric conversion elements configured to acquire signals for distance measurement and included in at least a part of the plurality of pixels, and a control electrode disposed on the semiconductor via an insulating film, wherein the control electrode is configured to control positions or shapes of the photoelectric conversion elements by applied voltages, while the distance measurement pixel maintains the number of the plurality of photoelectric conversion elements.