公开(公告)号：US20170115540A1

公开(公告)日：2017-04-27

申请号：US15034827

申请日：2015-09-18

Applicant: BOE Technology Group Co., Ltd. ,  HEFEI BOE Optoelectronics Technology Co., Ltd.

Inventor： Ping Song ,  Hongmin Li ,  Wei Xue ,  Zhifu Dong ,  Honggang Gu ,  Xiaohe Li

IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/1368

CPC classification number: G02F1/136209 ,  G02F1/133723 ,  G02F1/133788 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/127 ,  H01L29/78633

Abstract: A thin film transistor and its manufacturing method are provided. The thin film transistor comprises an active layer on a substrate, and further comprises an ultraviolet light blocking layer positioned on a side of the active layer away from the substrate, and the active layer has a projection on the substrate which is within a projection of the ultraviolet light blocking layer on the substrate. The active layer is completely covered by the ultraviolet light blocking layer, and during the photo-alignment process, the ultraviolet light blocking layer can effectively eliminate the influence of the ultraviolet light on the active layer of the thin film transistor and ensure that the performance of the thin film transistor will not be affected by irradiation of the ultraviolet light.