Abstract:
A magnetic recording medium having high running stability and good magnetic characteristics without causing an abrasion problem, which comprises a base film, a magnetic layer provided on one surface (i.e. the major surface) of the base film and a back coat layer provided on the other surface (i.e. the back surface) of the base film, the back coat layer comprising a binder and non-magnetic particles dispersed therein, characterized in that the non-magnetic particles comprise at least one soft inorganic pigment having a hardness of less than 5 in Mohs' scale of hardness and at least one hard inorganic pigment of not less than 5 in Mohs' scale of hardness and of not more than 0.2 .mu.m in average particle size in a weight ratio of the soft pigment to the hard pigment of 99:1 to 50:50.
Abstract:
A headlamp 1 includes (i) a laser element 2 for emitting a laser beam, (ii) a light emitting section 4, including a sealing material made from an inorganic material, for emitting fluorescence upon receiving the laser beam emitted from the laser element 2, and (iii) a heat sink 7 for releasing, via a contact surface of the heat sink 7 which contact surface is in contact with the light emitting section 4, heat generated in the light emitting section 4 in response to the laser beam emitted onto the light emitting section 4, the light emitting section 4 existing within a range which is determined on the basis of the contact surface and with which desired heat releasing efficiency is obtained.
Abstract:
A headlight system in accordance with the present invention includes: a semiconductor laser element that emits laser light; a light-emitting section that upon receipt of the laser light emitted from the semiconductor laser element, emits illumination light which is both the laser light and fluorescence obtained by wavelength conversion of a portion of the laser light; and a diffusion plate that mixes the laser light and fluorescence which are contained in the illumination light emitted by the light-emitting section.
Abstract:
A light emitting section emits fluorescence upon receiving exciting light emitted from a laser element. The light emitting section includes a plurality of fluorescent material particles made from a single type of fluorescent material or several types of fluorescent materials, the plurality of fluorescent material particles being accumulated on a metal substrate to form a layer of the plurality of fluorescent material particles. Each of the plurality of fluorescent material particles has a surface coated with a coating layer. The coating layer forms an uneven shape of a surface of the light emitting section.
Abstract:
A light projection unit is provided that can reduce the production of a portion where the light density is excessively increased on a fluorescent member. This light projection unit includes: a light collection member that includes a light entrance surface and a light emission surface which has an area smaller than that of the light entrance surface; a fluorescent member that includes an application surface to which the laser light emitted from the light collection member is applied and that mainly emits fluorescent light from the application surface; and a light projection member that projects the fluorescent light. The light emission surface of the light collection member is arranged a predetermined distance from the application surface of the fluorescent member.
Abstract:
A method of modifying the optical properties of a processed nitride semiconductor light-emitting device initially comprises disposing the processed nitride semiconductor light-emitting device in a vacuum chamber. One or more nitride semiconductor layers are then grown by molecular beam epitaxy thereby to modify the optical properties of the processed light-emitting device. Activated nitrogen, for example from a plasma source, is supplied to the vacuum chamber during growth of the nitride semiconductor layer(s). The use of activated nitrogen reduces the growth temperature required for the growth of the nitride semiconductor layer(s), as the need for thermal activation of a nitrogen species is eliminated. Moreover, use of a growth method such as, for example, plasma-assisted MBE to grow the nitride semiconductor layer(s) allows much more precise control of their thickness and composition.