公开(公告)号：US20100068658A1

公开(公告)日：2010-03-18

申请号：US12233298

申请日：2008-09-18

Applicant: Fenghong Zhang ,  Jian Xu ,  Xinyu Zhang ,  Ching-Hwa Chen ,  Leu Mei

Inventor： Fenghong Zhang ,  Jian Xu ,  Xinyu Zhang ,  Ching-Hwa Chen ,  Leu Mei

IPC: G03F7/20

CPC classification number: G03F1/00 ,  G03F7/70558

Abstract: A pillar array is printed in positive photoresist using an optical mask (108) having an array of features (310) corresponding to the pillars. The pillars' width/length dimensions are below the exposure wavelength. Superior results can be achieved (less peeling off of the pillars and less overexposure at the center of each pillar) if the mask features (310) are downsized relative to the pillars' target sizes, and the exposure energy is reduced. Negative photoresist (with a dark field mask) can be used, and can provide good results (in terms of pillars peeling-off) if the combined area of the features (410) corresponding to the pillars is smaller than the area between the features (410).

Abstract translation: 使用具有对应于柱的特征阵列（310）的光学掩模（108）将柱阵列印刷在正性光致抗蚀剂中。 支柱的宽度/长度尺寸低于曝光波长。 如果掩模特征（310）相对于柱体的目标尺寸减小，并且曝光能量减小，则可以实现优异的结果（较少的柱的剥离和在每个柱的中心处较少的过度曝光）。 如果与柱相对应的特征（410）的组合面积小于特征之间的面积，则可以使用负光致抗蚀剂（具有暗场掩模），并且可以提供良好的结果（在柱子剥离方面） 410）。

公开(公告)号：US20060017092A1

公开(公告)日：2006-01-26

申请号：US10898273

申请日：2004-07-23

Applicant: Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chia-Shun Hsiao

Inventor： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chia-Shun Hsiao

IPC: H01L21/8242 ,  H01L21/336

CPC classification number: H01L27/11526 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/42324

Abstract: Conventional fabrication of top oxide in an ONO-type memory cell stack usually produces Bird's Beak. Certain materials in the stack such as silicon nitrides are relatively difficult to oxidize. As a result oxidation does not proceed uniformly along the multi-layered height of the ONO-type stack. The present disclosure shows how radical-based fabrication of top-oxide of an ONO stack (i.e. by ISSG method) can help to reduce formation of Bird's Beak. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse deeply through already oxidized layers of the ONO stack such as the lower silicon oxide layer. As a result, a more uniform top oxide dielectric can be fabricated with more uniform breakdown voltages along its height. Additionally, adjacent low and high voltage transistors may benefit from simultaneous formation of their gate dielectrics with use of the radical-based oxidizing method.

Abstract translation: ONO型记忆体堆叠中的顶层氧化物的常规制造通常产生Bird's Beak。 叠层中的某些材料如氮化硅相对难以氧化。 因此，氧化不会沿着ONO型堆叠的多层高度均匀地进行。 本公开显示了如何基于根基的ONO堆叠的顶部氧化物的制造（即通过ISSG方法）可以帮助减少Bird's Beak的形成。 更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料，例如氮化硅，并且表明短寿命氧化剂交替地或另外不会扩散深 通过已经氧化的ONO堆叠层，例如较低的氧化硅层。 结果，可以制造更均匀的顶部氧化物电介质，沿其高度具有更均匀的击穿电压。 此外，相邻的低压和高压晶体管可以受益于使用基于自由基的氧化方法同时形成其栅极电介质。

公开(公告)号：US20050227437A1

公开(公告)日：2005-10-13

申请号：US10821100

申请日：2004-04-07

Applicant: Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Yang

Inventor： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Yang

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788

CPC classification number: H01L21/28273 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/7881

Abstract: Conventional fabrication of sidewall oxide around an ONO-type memory cell stack usually produces Bird's Beak because prior to the fabrication, there is an exposed sidewall of the ONO-type memory cell stack that exposes side parts of a plurality of material layers respectively composed of different materials. Certain materials in the stack such as silicon nitrides are more difficult to oxidize than other materials in the stack such polysilicon. As a result oxidation does not proceed uniformly along the multi-layered height of the sidewall. The present disclosure shows how radical-based fabrication of sidewall dielectric can help to reduce the Bird's Beak formation. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse as deeply through already oxidized layers of the sidewall such as silicon oxide layers. As a result, a more uniform sidewall dielectric can be fabricated with more uniform breakdown voltages along it height.

Abstract translation: 通常在ONO型存储单元堆叠周围制造侧壁氧化物通常产生鸟喙，因为在制造之前，存在ONO型存储单元堆叠的暴露的侧壁，其暴露分别由不同的多个材料层组成的多个材料层的侧面部分 材料 堆叠中的某些材料如氮化硅比堆叠中的其它材料更难以氧化，这样的多晶硅。 结果，氧化不沿着侧壁的多层高度均匀地进行。 本公开显示了基于侧壁电介质的基于基础的制造有助于减少鸟喙形成。 更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料如氮化硅，并且表明短寿命氧化剂交替地或另外不扩散为 深深地通过侧壁的已氧化层，例如氧化硅层。 结果，可以制造更均匀的侧壁电介质，沿其高度具有更均匀的击穿电压。

公开(公告)号：US4835794A

公开(公告)日：1989-06-06

申请号：US163592

申请日：1988-03-03

Applicant: Jiann-Jong Chen ,  Ching-Hwa Chen

Inventor： Jiann-Jong Chen ,  Ching-Hwa Chen

IPC: A41D25/02 ,  A44B19/30

CPC classification number: A41D25/008 ,  A41D25/02 ,  A44B19/303 ,  Y10T24/2566

Abstract: A novel preset necktie comprises an outer tie, and inner tie, a zipper, a zipper slider of unique configuration, and a support body. The outer and the inner ties are both separate individual bodies with the upper portion of the inner tie being connected to form a loop and a zipper being disposed to the inner side of the lower portion thereof to form into the tie loop. With the inner tie having been threaded through the support body and the pull tab of the specially designed slider secured to the inner side of said slider, the size of the tie loop can be adjusted by pushing or pulling said support body. A pressing spring plate is provided on the inner side of the slider so as to keep the shape of the tie loop fixed. The upper portion of the outer tie is secured to the support body by means of a rivet and preset into a regular knot such that the user does not have to set the knot each time when wearing then necktie.

Abstract translation: 一个新颖的预制领带包括一个外部领带，内部领带，拉链，独特构造的拉链滑块和支撑体。 外部和内部连接件是分开的单个主体，内部连接件的上部连接以形成一个环，并且拉链设置在其下部的内侧以形成连接环。 由于内部连接件已经穿过支撑体，并且特别设计的滑块的拉片固定到所述滑块的内侧，可以通过推动或拉动所述支撑体来调节连接环的尺寸。 在滑块的内侧设置有按压弹簧板，以使扎带的形状保持固定。 外部系带的上部通过铆钉固定到支撑体上，并预先设置成规则的结，使得用户每次穿着领带时都不必设置结。