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21.发明授权公开(公告)号：US10157861B2
公开(公告)日：2018-12-18
申请号：US15657438
申请日：2017-07-24
Applicant: Texas Instruments Incorporated
Inventor： Ricky Alan Jackson , Sudtida Lavangkul , Erika Lynn Mazotti
IPC: H01L23/544 , H01L23/00 , H01L23/528 , H01L23/532 , H01L23/58 , H01L23/31
Abstract: Disclosed embodiments include an integrated circuit having a semiconductor substrate with insulator layers and conductor layers overlying the semiconductor substrate. A scribe region overlying the semiconductor substrate and a periphery of the integrated circuit includes a crack arrest structure and a scribe seal. The crack arrest structure provides first vertical conductor structure that surrounds the periphery of the integrated circuit. The scribe seal is spaced from and surrounded by the crack arrest structure and provides a second vertical conductor structure. The scribe seal includes first and second vias spaced from each other and connected to one of the conductor layers. The first via is a trench via and the second via is a stitch via, with the second via being located closer to the crack arrest structure than the first via.
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公开(公告)号：US20230129179A1
公开(公告)日：2023-04-27
申请号：US17508706
申请日：2021-10-22
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Erika Lynn Mazotti , William David French , Ricky Alan Jackson
Abstract: A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.
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公开(公告)号：US20220365018A1
公开(公告)日：2022-11-17
申请号：US17709692
申请日：2022-03-31
Applicant: Texas Instruments Incorporated
Inventor： Ricky Alan Jackson , Wai Lee
IPC: G01N27/22
Abstract: Monolithic humidity sensor devices, and methods of manufacture. The devices include circuitry on or over a silicon substrate. A primary passivation barrier is formed over the circuitry with conductive vias therethrough; a capacitor, comprising metal fingers with spaces therebetween, is formed above said primary passivation barrier and electrically coupled by the conductive vias to the circuitry. A secondary passivation barrier is formed over the capacitor. A hygroscopic material layer is formed over the secondary passivation barrier, wherein the capacitor is operable to exhibit a capacitance value responsive to moisture present in the hygroscopic material layer and the circuitry is operable to generate a signal responsive to said capacitance value.
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24.发明申请公开(公告)号：US20200274514A1
公开(公告)日：2020-08-27
申请号：US16284831
申请日：2019-02-25
Applicant: Texas Instruments Incorporated
Inventor： Ting-Ta Yen , Brian Goodlin , Ricky Alan Jackson , Nicholas Stephen Dellas
Abstract: A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.
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公开(公告)号：US10651817B2
公开(公告)日：2020-05-12
申请号：US15857906
申请日：2017-12-29
Applicant: Texas Instruments Incorporated
Inventor： Ting-Ta Yen , Brian Goodlin , Ricky Alan Jackson , Nicholas Stephen Dellas
Abstract: In described examples of a micromechanical system (MEMS), a rigid cantilevered platform is formed on a base substrate. The cantilevered platform is anchored to the base substrate by only a single anchor point. A MEMS resonator is formed on the cantilevered platform.
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Patent Agency Ranking
公开(公告)号：US10570006B2
公开(公告)日：2020-02-25
申请号：US15447932
申请日：2017-03-02
Applicant: Texas Instruments Incorporated
Inventor： Ricky Alan Jackson , Walter Baker Meinel , Kalin Valeriev Lazarov , Brian E. Goodlin
IPC: B81B7/00 , H01L27/144 , B81C1/00
Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.
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公开(公告)号：US20190207581A1
公开(公告)日：2019-07-04
申请号：US15857906
申请日：2017-12-29
Applicant: Texas Instruments Incorporated
Inventor： Ting-Ta Yen , Brian Goodlin , Ricky Alan Jackson , Nicholas Stephen Dellas
CPC classification number: H03H9/02433 , B81B7/0016 , B81B2201/0271 , B81B2203/0118 , B81B2203/0315 , B81B2207/012 , B81C1/0015 , B81C2203/0785 , H03H3/0073 , H03H9/02133 , H03H2009/0248
Abstract: In described examples of a micromechanical system (MEMS), a rigid cantilevered platform is formed on a base substrate. The cantilevered platform is anchored to the base substrate by only a single anchor point. A MEMS resonator is formed on the cantilevered platform.
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公开(公告)号：US10276787B2
公开(公告)日：2019-04-30
申请号：US15041575
申请日：2016-02-11
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Ricky Alan Jackson , Fuchao Wang
Abstract: An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.
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公开(公告)号：US10184991B2
公开(公告)日：2019-01-22
申请号：US15152002
申请日：2016-05-11
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Ricky Alan Jackson , Ann Margaret Gabrys
Abstract: A fluxgate device that includes a first magnetic core and a second magnetic core. The first magnetic core has a first magnetized direction that deviates from a first sense direction by more than 0 degree and less than 90 degrees. The second magnetic core is arranged orthogonally to the first magnetic core. The second magnetic core has a second magnetized direction that deviates from a second sense direction by more than 0 degree and less than 90 degrees.
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30.发明申请公开(公告)号：US20170343622A1
公开(公告)日：2017-11-30
申请号：US15169639
申请日：2016-05-31
Applicant: Texas Instruments Incorporated
Inventor： Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
CPC classification number: G01R33/04 , G01R33/0052
Abstract: An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
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