公开(公告)号：US20210153332A1

公开(公告)日：2021-05-20

申请号：US16990059

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Injae LEE ,  Sunghyup KIM ,  Jeonggil KIM ,  Jinyong KIM ,  Hyuck SHIN ,  Sungho JANG ,  Inho CHOI

IPC: H05G2/00 ,  G03F7/20

Abstract: A droplet generator for extreme ultraviolet (EUV) exposure device includes a nozzle body with an inclined portion, the nozzle body with the inclined portion having a nozzle shape to discharge a target material in a liquid state, a gas supply pipe, at least a portion of the gas supply pipe being in an internal space of the nozzle body and of the inclined portion, and the gas supply pipe to discharge gas toward the target material in the liquid state, a target material supply unit connected to the nozzle body, the target material supply unit including a first valve, a gas supply unit connected to the gas supply pipe, the gas supply unit including a second valve, and a control unit connected to the first and second valves to control a supply amount of the target material and the gas.

公开(公告)号：US20210132515A1

公开(公告)日：2021-05-06

申请号：US16880090

申请日：2020-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungho JANG ,  Sungyeol Kim ,  Hyuck Shin ,  Keunhee Bai ,  Injae Lee

IPC: G03F7/20

Abstract: An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask.
The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force.
The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted.
When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

公开(公告)号：US20190287977A1

公开(公告)日：2019-09-19

申请号：US16419947

申请日：2019-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiseok LEE ,  Chan-Sic YOON ,  Augustin HONG ,  Keunnam KIM ,  Dongoh KIM ,  Bong-Soo KIM ,  Jemin PARK ,  Hoin LEE ,  Sungho JANG ,  Kiwook JUNG ,  Yoosang HWANG

IPC: H01L27/108

Abstract: A method of manufacturing a semiconductor memory device and a semiconductor memory device, the method including providing a substrate that includes a cell array region and a peripheral circuit region; forming a mask pattern that covers the cell array region and exposes the peripheral circuit region; growing a semiconductor layer on the peripheral circuit region exposed by the mask pattern such that the semiconductor layer has a different lattice constant from the substrate; forming a buffer layer that covers the cell array region and exposes the semiconductor layer; forming a conductive layer that covers the buffer layer and the semiconductor layer; and patterning the conductive layer to form conductive lines on the cell array region and to form a gate electrode on the peripheral circuit region.

公开(公告)号：US20160078919A1

公开(公告)日：2016-03-17

申请号：US14734315

申请日：2015-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon HAN ,  Won-Kyung PARK ,  Junghee LIM ,  Sungho JANG

IPC: G11C11/4091

CPC classification number: G11C11/4091 ,  G11C5/02 ,  G11C11/4094 ,  G11C2207/002

Abstract: A semiconductor memory device includes a bit line sense amplifier, a first column select gate, and a second column select gate. The bit line sense amplifier senses an electric potential difference between a bit line and a complementary bit line during a sensing operation for memory cells. The first column select gate transfers an electric potential on the bit line to a local sense amplifier based on a column select signal. The second column select gate transfers an electric potential on the complementary bit line to the local sense amplifier based on the column select signal. The first and second column select gates have different current drive abilities to compensate a difference in bit line interconnection resistance.

Abstract translation: 半导体存储器件包括位线读出放大器，第一列选择栅极和第二列选择栅极。 在存储器单元的感测操作期间，位线读出放大器感测位线和互补位线之间的电位差。 第一列选择栅极基于列选择信号将位线上的电位传送到本地读出放大器。 第二列选择栅极基于列选择信号将互补位线上的电位传送到本地读出放大器。 第一和第二列选择栅极具有不同的电流驱动能力，以补偿位线互连电阻的差异。