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    Light emitting device, production method thereof, and display device including the same
    24.
    发明授权
    Light emitting device, production method thereof, and display device including the same 有权

    公开(公告)号：US11482686B2

    公开(公告)日：2022-10-25

    申请号：US17085167

    申请日：2020-10-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwanghee Kim ,  Moon Gyu Han ,  Eun Joo Jang ,  Hyo Sook Jang

    IPC: H01L29/06 ,  H01L51/50 ,  H01L51/56 ,  C09K11/02 ,  C09K11/88 ,  B82Y40/00 ,  B82Y20/00

    Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

    Light emitting device and display device including the same
    25.
    发明授权
    Light emitting device and display device including the same 有权

    公开(公告)号：US11205761B2

    公开(公告)日：2021-12-21

    申请号：US16832004

    申请日：2020-03-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwanghee Kim ,  Dae Young Chung ,  Tae Hyung Kim ,  Eun Joo Jang ,  Moon Gyu Han

    IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

    Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

    Light emitting device and display device including the same
    26.
    发明授权
    Light emitting device and display device including the same 有权

    公开(公告)号：US10978658B2

    公开(公告)日：2021-04-13

    申请号：US16549472

    申请日：2019-08-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dae Young Chung ,  Kwanghee Kim ,  Hongkyu Seo ,  Eun Joo Jang ,  Oul Cho ,  Tae Hyung Kim ,  Yuho Won ,  Hee Jae Lee

    IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

    Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

    Quantum dot device and electronic device
    29.
    发明授权
    Quantum dot device and electronic device 有权

    公开(公告)号：US10446782B1

    公开(公告)日：2019-10-15

    申请号：US16104967

    申请日：2018-08-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Moon Gyu Han ,  Dae Young Chung ,  Hongkyu Seo ,  Kwanghee Kim ,  Kun Su Park ,  Sujin Park ,  Eun Joo Jang

    IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

    Abstract: A quantum dot device includes a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and comprising a plurality of quantum dots, a first charge auxiliary layer disposed between the first electrode and the quantum dot layer and contacting the quantum dot layer, and a second charge auxiliary layer disposed between the second electrode and the quantum dot layer and contacting the quantum dot layer, wherein the plurality of quantum dots includes a quantum dot including an organic ligand on a surface thereof, the organic ligand including a hydrophilic functional group at a terminal end.

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