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21.
公开(公告)号:US20240038738A1
公开(公告)日:2024-02-01
申请号:US18483444
申请日:2023-10-09
Applicant: Samsung Display Co., LTD.
Inventor: Hyun Min CHO , Dae Hyun KIM , Dong Uk KIM , Jung Hong MIN , Seung A LEE , Hyung Rae CHA
IPC: H01L25/075 , H01L33/00 , H01L27/12 , H01L33/22 , H01L33/62
CPC classification number: H01L25/0753 , H01L33/0093 , H01L27/1214 , H01L33/22 , H01L33/62 , H01L2933/0066
Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.
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公开(公告)号:US20230018385A1
公开(公告)日:2023-01-19
申请号:US17675052
申请日:2022-02-18
Applicant: Samsung Display Co., LTD.
Inventor: Hyung Rae CHA , Dong Uk KIM , Dong Kyun SEO , Young Chul SIM
Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element comprising: a light-emitting element core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a nitride insulating film surrounding a side face of the light-emitting element core, a first element insulating film surrounding an outer side face of the nitride insulating film, and a second element insulating film surrounding an outer side face of the first element insulating film, wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.
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23.
公开(公告)号:US20220336527A1
公开(公告)日:2022-10-20
申请号:US17641412
申请日:2020-02-27
Applicant: Samsung Display Co., LTD.
Inventor: Hyung Rae CHA , Dong Uk KIM , Myeong Hee KIM , Se Young KIM , Hyun Min CHO
Abstract: A light emitting device includes: a first semiconductor layer that is doped with a first polarity dopant, and that includes a first part extending in a first direction and a second part connected to one side of the first part; a second semiconductor layer doped with second polarity dopant that differs from the first polarity dopant; an active layer between the first semiconductor layer and the second semiconductor layer; and an insulation film around at least the outer surface of the active layer and extends in the first direction, wherein the diameter of the second part measured in a second direction perpendicular to the first direction is larger than the diameter of the first part measured in the second direction, and the side surface of the second part is inclined.
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公开(公告)号:US20220254959A1
公开(公告)日:2022-08-11
申请号:US17626019
申请日:2020-06-03
Applicant: Samsung Display Co., LTD.
Inventor: Seung Geun LEE , Dong Uk KIM , Dae Hyun KIM , Se Young KIM , Hyun Min CHO , Hyung Rae CHA
Abstract: A light emitting element having a shape extending in a direction includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and second semiconductor layers, a first electrode layer on a second surface opposite to a first surface of the first semiconductor layer facing the active layer, a second electrode layer on a second surface opposite to a first surface of the second semiconductor layer facing the active layer, and an insulating film surrounding a side surface of the active layer, a side surface of the first electrode layer, and a side surface of the second electrode layer, wherein a first area including the insulating film adjacent to a side surface of the active layer has a thickness larger than a thickness of a second area including the insulating film adjacent to a side surface of the first electrode layer.
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公开(公告)号:US20220068892A1
公开(公告)日:2022-03-03
申请号:US17244397
申请日:2021-04-29
Applicant: Samsung Display Co., LTD.
Inventor: Hyung Rae CHA , Dong Uk KIM , Sung Ae JANG , Ji Hyun HAM
Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.
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公开(公告)号:US20210343894A1
公开(公告)日:2021-11-04
申请号:US17377266
申请日:2021-07-15
Applicant: Samsung Display Co. Ltd.
Inventor: Jung Hong MIN , Dae Hyun KIM , Hyun Min CHO , Jong Hyuk KANG , Dong Uk KIM , Seung A LEE , Hyun Deok IM , Hyung Rae CHA
Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.
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27.
公开(公告)号:US20210091255A1
公开(公告)日:2021-03-25
申请号:US17110574
申请日:2020-12-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jung Hong MIN , Dae Hyun KIM , Seung A LEE , Hyun Min CHO , Jong Hyuk KANG , Dong Uk KIM , Hyun Deok IM , Hyung Rae CHA
IPC: H01L33/00 , H01L27/15 , H01L33/32 , H01L21/302
Abstract: A light emitting element, a method of manufacturing a light emitting element, and a display device including a light emitting element are provided. A method of manufacturing a light emitting element includes: preparing a lower panel including a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer including at least one mask pattern on at least a part of the lower panel to be spaced apart from each other and an opening region in which the mask patterns are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.
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28.
公开(公告)号:US20190378953A1
公开(公告)日:2019-12-12
申请号:US16274109
申请日:2019-02-12
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jung Hong MIN , Dae Hyun KIM , Seung A LEE , Hyun Min CHO , Jong Hyuk KANG , Dong Uk KIM , Hyun Deok IM , Hyung Rae CHA
Abstract: A light emitting element, a method of manufacturing a light emitting element, and a display device including a light emitting element are provided. A method of manufacturing a light emitting element includes: preparing a lower panel including a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer including at least one mask pattern on at least a part of the lower panel to be spaced apart from each other and an opening region in which the mask patterns are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.
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