公开(公告)号：US20210376025A1

公开(公告)日：2021-12-02

申请号：US17246367

申请日：2021-04-30

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo KIM ,  Tae Wook KANG

IPC: H01L27/32 ,  G09G3/3291 ,  G09G3/3258 ,  G09G3/3233

Abstract: A display device includes: a plurality of pixels on a substrate, each of the plurality of pixels including a light emitting element and a pixel circuit configured to drive the light emitting element, wherein the pixel circuit of each of the plurality of pixels comprises: a first-first transistor configured to control a driving current flowing through the light emitting element based on a voltage of a first node; a first-second transistor connected in series with the first-first transistor and configured to control the driving current based on a voltage of a second node; a second transistor configured to selectively supply a data voltage to a third node which is a first electrode of the first-first transistor; a third-first transistor connected between the first node and a fourth node which is a second electrode of the first-second transistor; and a third-second transistor connected between the second node and the fourth node.

公开(公告)号：US20210151475A1

公开(公告)日：2021-05-20

申请号：US17071579

申请日：2020-10-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H01L27/12 ,  H01L27/32 ,  G09G3/32 ,  H01L21/265 ,  H01L21/225 ,  H01L21/28

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US20210057502A1

公开(公告)日：2021-02-25

申请号：US16857888

申请日：2020-04-24

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo KIM ,  Sang Sub KIM ,  Hye Na KWAK ,  Doo Na KIM ,  Thanh Tien NGUYEN ,  Yong Su LEE ,  Jae Hwan CHU

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/3266

Abstract: A display device includes pixels at least one of which includes a light emitting element connected between a first power source and a second power source, a first transistor connected between the first power source and the light emitting element and controlling a driving current flowing through the light emitting element in response to a voltage of a first node, a switching transistor connected to the first node and including and active layer that includes first and second conductive regions spaced apart from each other, first and second channel regions disposed between the first and second conductive regions, and a common conductive region disposed between the first and second channel regions, and a conductive pattern overlapping the active layer to face the common conductive region.

公开(公告)号：US20240304726A1

公开(公告)日：2024-09-12

申请号：US18665023

申请日：2024-05-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H01L29/786 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H01L27/12 ,  H01L29/66 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US20230386376A1

公开(公告)日：2023-11-30

申请号：US18156800

申请日：2023-01-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keun Woo KIM

IPC: G09G3/00 ,  G09G3/3233

CPC classification number: G09G3/006 ,  G09G3/3233 ,  H01L25/167

Abstract: A pixel includes: a light emitting element; a first transistor including a first electrode connected to a first power line, to which a voltage of the first power supply is supplied, where the first transistor controls, in response to a voltage of a first node connected to a gate electrode thereof, current flowing from the first power line to a second power line, to which a voltage of a second power supply is supplied, via the light emitting element; a second transistor connected between a data line and a second node, where the second transistor is turned on when a first scan signal is supplied thereto through a first scan line; a first capacitor connected between the first node and the second node; and a connector electrically connected between the first node to the second node.

公开(公告)号：US20230223478A1

公开(公告)日：2023-07-13

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H10K59/12 ,  H01L29/66

CPC classification number: H10K59/1201 ,  H01L29/6675 ,  H10K59/1213

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US20230157073A1

公开(公告)日：2023-05-18

申请号：US17986761

申请日：2022-11-14

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo KIM

IPC: H01L27/32 ,  G09G3/3233

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  H01L27/3265 ,  H01L27/1222

Abstract: A display device includes: a substrate; a buffer layer on the substrate; a driving transistor on the buffer layer and including a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode; and a switching transistor on the buffer layer and spaced apart from the driving transistor, the switching transistor including a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode, wherein the buffer layer includes a first buffer layer including silicon nitride and a second buffer layer including silicon oxide, only the second buffer layer is under the first semiconductor pattern of the driving transistor, and the first buffer layer and the second buffer layer are under the second semiconductor pattern of the switching transistor.

公开(公告)号：US20220165824A1

公开(公告)日：2022-05-26

申请号：US17376064

申请日：2021-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo KIM

IPC: H01L27/32 ,  H01L51/00

Abstract: An embodiment of a display device includes a flexible substrate including a polyimide layer and a barrier layer disposed on the polyimide layer. A driving transistor and a second transistor are disposed on the flexible substrate and include a polycrystalline semiconductor layer. A third transistor is disposed on the flexible substrate and includes an oxide semiconductor layer. A light emitting diode is electrically connected to the driving transistor. A bottom shield layer is disposed between the polyimide layer and the polycrystalline semiconductor layer in a cross-sectional view and disposed around a channel of the driving transistor in a plan view.

公开(公告)号：US20220139966A1

公开(公告)日：2022-05-05

申请号：US17386854

申请日：2021-07-28

Applicant: Samsung Display Co., LTD.

Inventor： Han Bit KIM ,  Mee Jae KANG ,  Keun Woo KIM ,  Doo-Na KIM ,  Sang Sub KIM ,  Do Kyeong LEE ,  Jae Hwan CHU

IPC: H01L27/12

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

公开(公告)号：US20210036080A1

公开(公告)日：2021-02-04

申请号：US16856780

申请日：2020-04-23

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo KIM ,  Hye Na KWAK ,  Doo Na KIM ,  Sang Sub KIM ,  Thanh Tien NGUYEN ,  Yong Su LEE ,  Jae Hwan CHU

IPC: H01L27/32 ,  G09G3/3233

Abstract: A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.