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公开(公告)号：US10964737B2
公开(公告)日：2021-03-30
申请号：US16604350
申请日：2018-05-15
发明人： Hideki Minari , Shunsuke Maruyama
IPC分类号： H01L27/146 , H01L31/101 , H01L31/09 , H01L31/107
摘要： A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface; a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.
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公开(公告)号：US10741599B2
公开(公告)日：2020-08-11
申请号：US15768378
申请日：2016-10-12
IPC分类号： H01L27/146 , H04N5/355 , H04N5/3745
摘要： Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.
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