公开(公告)号：US20180341165A1

公开(公告)日：2018-11-29

申请号：US15965900

申请日：2018-04-28

Applicant: Renesas Electronics Corporation

Inventor： Shinichi WATANUKI ,  Yasutaka NAKASHIBA ,  Masaru WAKABAYASHI

IPC: G02F1/225

CPC classification number: G02F1/2257 ,  G02F2001/212 ,  G02F2201/063

Abstract: In a semiconductor device connected to a first optical waveguide, a phase modulation unit, and a second optical waveguide in this order and having an optical modulator guiding light in a first direction, the phase modulation unit includes: a semiconductor layer whose length in the first direction is larger than a width in a second direction orthogonal to the first direction and which is made of monocrystalline silicon; a core part serving as an optical waveguide region formed on the semiconductor layer, and extending in the first direction; a pair of slab parts arranged on both sides of the core part in the second direction; a first electrode coupled with one of the slab parts; and a second electrode coupled with the other of the slab parts. The core part has a p type semiconductor region and an n type semiconductor region extending in the first direction, and the second direction coincides with a crystal orientation of the semiconductor layer.

公开(公告)号：US20170068051A1

公开(公告)日：2017-03-09

申请号：US15243746

申请日：2016-08-22

Applicant: Renesas Electronics Corporation ,  Photonics Electronics Technology Research Association

Inventor： Shinichi WATANUKI ,  Akira MITSUIKl ,  Atsuro INADA ,  Tohru MOGAMI ,  Tsuyoshi HORIKAWA ,  Keizo KINOSHITA

IPC: G02B6/136 ,  G02B6/122

CPC classification number: G02B6/136 ,  G02B6/12004 ,  G02B6/122 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02F1/025 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2202/105

Abstract: When an optical waveguide is formed, an area of an opening of a resist mask is equal to an area of a semiconductor layer for a dummy pattern exposed from the resist mask, and the semiconductor layer for the dummy pattern exposed from the resist mask has a uniform thickness in a region in which the dummy pattern is formed. As a result, an effective pattern density does not change in etching the semiconductor layer for the dummy pattern, and accordingly, it is possible to form a rib-shaped optical waveguide having desired dimensions and a desired shape.

Abstract translation: 当形成光波导时，抗蚀剂掩模的开口面积等于从抗蚀剂掩模露出的虚拟图案的半导体层的面积，并且从抗蚀剂掩模露出的伪图案的半导体层具有 在其中形成虚拟图案的区域中具有均匀的厚度。 结果，对于伪图案的半导体层的蚀刻，有效图案密度不变，因此，可以形成具有所需尺寸和期望形状的肋状光波导。

公开(公告)号：US20170023732A1

公开(公告)日：2017-01-26

申请号：US15186528

申请日：2016-06-19

Applicant: Renesas Electronics Corporation

Inventor： Shinichi WATANUKI ,  Yasutaka NAKASHIBA

IPC: G02B6/12 ,  G02B6/42

CPC classification number: G02B6/428 ,  G02B6/43 ,  G02B2006/12061

Abstract: An interposer includes a plurality of identical functional blocks arranged in the x direction, for example, and the functional blocks include a first region mounting a semiconductor chip, a second region mounting a light emitting element chip, a third region mounting a light receiving element chip, and a plurality of silicon waveguides. Then, the second and third regions are arranged between the first region and a first side along the x direction of the interposer. In addition, the plurality of silicon waveguides are arranged between the second region and the first side, and between the third region and the first side, extending from the second region toward the first side and from the third region toward the first side and are not formed between the functional blocks adjacent in the x direction.

Abstract translation: 插入器包括例如沿x方向布置的多个相同的功能块，功能块包括安装半导体芯片的第一区域，安装发光元件芯片的第二区域，安装光接收元件芯片的第三区域 ，以及多个硅波导。 然后，第二区域和第三区域沿着插入件的x方向布置在第一区域和第一侧之间。 此外，多个硅波导布置在第二区域和第一侧之间以及第三区域和第一侧之间，从第二区域朝向第一侧和从第三区域朝向第一侧延伸，并且不是 形成在x方向相邻的功能块之间。

公开(公告)号：US20160282554A1

公开(公告)日：2016-09-29

申请号：US15062153

申请日：2016-03-06

Applicant: Renesas Electronics Corporation

Inventor： Shinichi WATANUKI ,  Atsuro INADA

IPC: G02B6/122 ,  G02B6/136

CPC classification number: H01L31/18 ,  G02B6/122 ,  G02B6/1223 ,  G02B6/13 ,  G02B6/136 ,  G02F1/025 ,  H01L31/02325

Abstract: A semiconductor substrate, an insulating layer made of silicon oxide formed on the semiconductor substrate and a semiconductor layer made of silicon formed on the insulating layer are provided, and the semiconductor layer constitutes an optical waveguide in an optical signal transmission line section and an optical modulator in an optical modulation section. Also, the insulating layer is removed except for a part thereof to have a hollow structure with a cavity, and both side surfaces and a lower surface of each of the semiconductor layers constituting the optical waveguide and the optical modulator are exposed and covered with air.

Abstract translation: 半导体衬底，形成在半导体衬底上的由氧化硅制成的绝缘层和形成在绝缘层上的由硅制成的半导体层，并且半导体层构成光信号传输线段中的光波导和光调制器 在光调制部分中。 此外，绝缘层除了其一部分之外被除去以具有空腔的中空结构，并且构成光波导和光调制器的每个半导体层的两个侧表面和下表面暴露并被空气覆盖。