公开(公告)号：US09082962B2

公开(公告)日：2015-07-14

申请号：US14086054

申请日：2013-11-21

Applicant: QUALCOMM Incorporated

Inventor： Seung Hyuk Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.

Abstract translation: 具有直接接触的磁性隧道结（MTJ）被制造成具有较低的电阻，提高的产量和更简单的制造。 较低的电阻提高了MTJ中的读取和写入过程。 MTJ层沉积在与底部金属对准的底部电极上。 蚀刻停止层可以沉积在底部金属附近，以防止围绕底部金属的绝缘体的过蚀刻。 在沉积MTJ层之前将底部电极平坦化以提供基本平坦的表面。 另外，可以在MTJ层之前的底部电极上沉​​积底层以促进MTJ的期望特性。

公开(公告)号：US20150179281A1

公开(公告)日：2015-06-25

申请号：US14138059

申请日：2013-12-21

Applicant: QUALCOMM Incorporated

Inventor： Xiao Lu ,  Wah Nam Hsu

IPC: G11C29/10 ,  G06F11/07

CPC classification number: G11C29/10 ,  G06F11/073 ,  G11C11/16 ,  G11C29/50016

Abstract: A particular method includes selecting a threshold data retention time of a magnetic tunnel junction (MTJ) memory cell. A pinned layer of the MTJ memory cell has a first direction of magnetization, and a free layer of the MTJ memory cell has a second direction of magnetization. An external magnetic field that has a third direction of magnetization that is opposite to the second direction of magnetization is applied to the MTJ memory cell. A strength of the external magnetic field is determined based on the threshold data retention time. Subsequent to applying the external magnetic field, a read operation is performed on the MTJ memory cell to determine a logic value of the MTJ memory cell. The method further includes determining whether the MTJ memory cell is subject to a data retention error corresponding to the threshold data retention time based on the logic value.

Abstract translation: 一种特定方法包括选择磁性隧道结（MTJ）存储单元的阈值数据保留时间。 MTJ存储单元的钉扎层具有第一磁化方向，并且MTJ存储单元的自由层具有第二磁化方向。 具有与第二磁化方向相反的第三磁化方向的外部磁场施加到MTJ存储单元。 基于阈值数据保持时间确定外部磁场的强度。 在施加外部磁场之后，对MTJ存储单元执行读取操作以确定MTJ存储器单元的逻辑值。 该方法还包括基于逻辑值确定MTJ存储器单元是否受到与阈值数据保留时间相对应的数据保留错误。