公开(公告)号：US11495456B2

公开(公告)日：2022-11-08

申请号：US16589270

申请日：2019-10-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: C23C16/02 ,  H01L21/02 ,  C23C16/50 ,  C23C16/458

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

公开(公告)号：US11495437B2

公开(公告)日：2022-11-08

申请号：US16878661

申请日：2020-05-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/02

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

公开(公告)号：US20220059321A1

公开(公告)日：2022-02-24

申请号：US17516065

申请日：2021-11-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C01B3/02

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

公开(公告)号：US11164742B2

公开(公告)日：2021-11-02

申请号：US16861900

申请日：2020-04-29

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/02

Abstract: Processes for selective deposition of material on a workpiece are provided. In one example, the method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has a first material and a second material. The second material is different from the first material. The method includes performing an organic radical based surface treatment process on the workpiece to modify an adsorption characteristic of the first material selectively relative to the second material such that the first material has a first adsorption characteristic and the second material has a second adsorption characteristic. The second adsorption characteristic being different from the first adsorption characteristic. The method includes performing a deposition process on the workpiece such that a material is selectively deposited on the first material relative to the second material.

公开(公告)号：US11164725B2

公开(公告)日：2021-11-02

申请号：US16420542

申请日：2019-05-23

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/22 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C01B3/02 ,  H01J37/32

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

公开(公告)号：US11626269B2

公开(公告)日：2023-04-11

申请号：US17201081

申请日：2021-03-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

公开(公告)号：US11387111B2

公开(公告)日：2022-07-12

申请号：US16379912

申请日：2019-04-10

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  C23C14/34

Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.

公开(公告)号：US20210307151A1

公开(公告)日：2021-09-30

申请号：US17346754

申请日：2021-06-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US11062910B2

公开(公告)日：2021-07-13

申请号：US16444146

申请日：2019-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/30 ,  C23C16/452 ,  H01L21/311 ,  H01L21/3213 ,  B01D67/00 ,  C23F1/12 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/768 ,  C23F4/00

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US20210066088A1

公开(公告)日：2021-03-04

申请号：US16904669

申请日：2020-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

IPC: H01L21/311 ,  H01L21/02

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.