Abstract:
An exemplary dynamic random access memory includes a first transistor (210), a second transistor (220) and a comparator (230). The first transistor includes a first gate electrode (211), a first source electrode (213) and a first drain electrode (215). The second transistor includes a second gate electrode (221), a second source electrode (223) and a second drain electrode (225). The first source electrode is connected with the second source electrode. The first drain electrode is an input terminal for inputting a message. The comparator is connected to the second drain electrode, and preconfigured with a reference current. The comparator compares the reference current and a current through the second drain electrode to define a state of the current read from the comparator.
Abstract:
A thin film transistor (TFT) substrate includes gate lines, data lines intersecting with the gate lines, a plurality of TFTs, pixel electrodes, and a common electrode insulating the gate lines, the data lines, the TFTs, and the pixel electrode. Each pixel electrode is connected to one of the gate lines and one of the data lines via one of the TFTs. A layer stack including an insulating layer and a passivation layer is sandwiched between the pixel electrodes and the common electrode.
Abstract:
An exemplary electro-wetting display (EWD) device includes a plurality of sub-pixel units. Each sub-pixel unit defines two opposite long sides and two opposite short sides. Each sub-pixel unit includes a first substrate, a second substrate facing toward the first substrate, a conductive first liquid and a polar second sandwiched between the first substrate and the second substrate, and an electrode. The first and second liquids are immiscible. The electrode is disposed at a surface of the second substrate facing the first liquid. The electrode defines an opening. A length of the opening as measured parallel to the nearest short side is not less than 0.8 times a length of the nearest short side.
Abstract:
An exemplary repairing method includes providing a substrate having a plurality of conducting lines; detecting a broken position of one of the conducting lines; switching on a nozzle; and forming a copper layer at the broken position on the substrate. The repairing method of the present invention employing a repairing device for performing a chemical vapor deposition (CVD) method to forming the copper layer at a position of the broken defect of one of the conducting lines.
Abstract:
A thin film transistor (TFT) substrate includes gate lines, data lines intersecting with the gate lines, a plurality of TFTs, pixel electrodes, and a common electrode insulating the gate lines, the data lines, the TFTs, and the pixel electrode. Each pixel electrode is connected to one of the gate lines and one of the data lines via one of the TFTs. A layer stack including an insulating layer and a passivation layer is sandwiched between the pixel electrodes and the common electrode.
Abstract:
An exemplary electro-wetting display (EWD) includes a plurality of pixel regions, and each pixel region includes a first substrate; a second substrate opposite to the first substrate; a first conductive liquid disposed between the first and second substrates; a second, colored, non-conductive liquid disposed between the first and second substrates, and the second liquid being immiscible with the first liquid; and an electrode disposed at a surface of the second substrate adjacent to the first substrate. The electrode includes a cutout portion to define a containing space for receiving the second liquid while the pixel region displaying white. The electrode includes an edge corresponding to an edge of the cutout portion, and the edge of the electrode has a shape corresponding to a shape of an edge of the second liquid while being receiving in the containing space.
Abstract:
An exemplary projection display device (2) includes a color light system (20), a light valve (23), and a projecting structure (25). The color light system is configured for providing different color light beams. The light valve is configured for modulating the color light beams respectively. The projecting structure is configured for projecting the modulated color light beams passing through from the light valve.
Abstract:
An exemplary damascene interconnect structure includes a substrate (20), a first dielectric layer (21) on the substrate, a plurality of trenches (27) formed in the first dielectric layer, and a plurality of metal lines (24) filled in the trenches. The first dielectric layer includes multi sub-dielectric layers (211, 212, 213). Wherein a plurality of air gaps (28) are maintained between the metal lines and at least one of the sub-dielectric layers. A method for fabricating the damascene interconnect structure is also provided.
Abstract:
An exemplary thin film transistor substrate (30) includes a bas substrate (31) and a gate electrode (32) formed on the bas substrate. The gate electrode includes a bonding layer (321) formed on the bas substrate and an electrically conductive layer (322) formed on the bonding layer. The bonding layer includes one of aluminum oxide and zirconium dioxide.
Abstract:
An exemplary organic light emitting display (200) includes a substrate (20), a first electrode layer (22), an organic layer (23), and a second electrode layer (21). The first electrode layer is disposed at the substrate. The organic layer is disposed at the first electrode layer. The second electrode layer includes a photic layer (210) disposed on the organic layer, an absorbing layer (211) disposed on the photic layer, and a metal layer (212) disposed on the absorbing layer. The absorbing layer is configured to absorb light beams passing through the photic layer. A method for manufacturing the organic light emitting display is also provided.