TEMPORARY PACKAGE FOR AT-SPEED FUNCTIONAL TEST OF SEMICONDUCTOR CHIP
    23.
    发明申请
    TEMPORARY PACKAGE FOR AT-SPEED FUNCTIONAL TEST OF SEMICONDUCTOR CHIP 有权
    用于半导体芯片的速度功能测试的临时封装

    公开(公告)号:US20100151598A1

    公开(公告)日:2010-06-17

    申请号:US12333842

    申请日:2008-12-12

    IPC分类号: H01L21/66 H01L23/34

    摘要: In some embodiments, a temporary package for at-speed functional test of semiconductor chip, including high power chips, is presented. In this regard, a method is introduced including placing an integrated circuit die on a contactor layer, the contactor layer to electrically couple contacts on the integrated circuit die with contacts on a multi-layer substrate designed to be permanently attached with the integrated circuit die, placing an integrated heat spreader over the integrated circuit die, and bonding the integrated heat spreader with the substrate, the integrated heat spreader holding the integrated circuit die in place to form a temporary package. Other embodiments are also disclosed and claimed.

    摘要翻译: 在一些实施例中,提供了用于包括高功率芯片的半导体芯片的高速功能测试的临时封装。 在这方面,引入了将集成电路管芯放置在接触器层上的方法,接触器层将集成电路管芯上的触点与设计成永久地与集成电路管芯连接的多层基板上的触点电耦合, 将集成散热器放置在集成电路管芯上,并将集成散热器与基板接合,将集成散热器固定在一起形成临时封装。 还公开并要求保护其他实施例。

    Chip package enabling increased input/output density

    公开(公告)号:US06627978B2

    公开(公告)日:2003-09-30

    申请号:US09967748

    申请日:2001-09-28

    IPC分类号: H01L23495

    摘要: A device and method for increasing input/output from a die by making electrically conductive microvias connecting the integrated circuit with a backside of the die. The backside electrically conductive microvias connect an integrated circuit in the die to pads on the backside of the die. A superstrate is situated on top of the die and connects to the microvias using controlled collapse chip connections (C4) with a thermal interface material (TIM) surrounding the electrical connections. A superstrate lead system electrically connects the backside pads to wirebonds that connect with either the substrate or directly to the motherboard. Heat dissipates from the die via the TIM to the superstrate to a heat sink situated on top of the superstate.