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公开(公告)号：US11621375B2
公开(公告)日：2023-04-04
申请号：US16472187
申请日：2017-10-07
发明人： Yingce Liu , Bin Song , Junxian Li , Qilong Wu , Yang Wang , Kaixuan Chen , Zhendong Wei , Xingen Wu , Hongyi Zhou , Lihe Cai , Xinmao Huang , Zhiwei Lin , Yongtong Li , Qimeng Lyu , Hexun Cai , Gengcheng Li
摘要： A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
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公开(公告)号：US11527679B2
公开(公告)日：2022-12-13
申请号：US16626516
申请日：2019-07-30
发明人： Xingen Wu , Yingce Liu , Junxian Li , Zhendong Wei
摘要： A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.
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23.发明授权公开(公告)号：US11201260B2
公开(公告)日：2021-12-14
申请号：US16569610
申请日：2019-09-12
发明人： Zhi Wan , Gang Yao , Xiangjing Zhuo , Zhiwei Lin
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00 , H01L33/14 , H01L33/36 , H01L33/44 , C23C16/18 , H01L33/12
摘要： A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.
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公开(公告)号：US10916422B2
公开(公告)日：2021-02-09
申请号：US16179419
申请日：2018-11-02
发明人： Kaixuan Chen , Wei Jiang , Zhiwei Lin , Xiangjing Zhuo , Tianzu Fang , Yang Wang , Jichu Tong
摘要： Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.
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公开(公告)号：US10121656B2
公开(公告)日：2018-11-06
申请号：US15432226
申请日：2017-02-14
发明人： Kaixuan Chen , Wei Jiang , Zhiwei Lin , Xiangjing Zhuo , Tianzu Fang , Yang Wang , Jichu Tong
IPC分类号： H01L21/02 , H01L31/0392 , H01L33/12 , C30B29/40 , C30B25/18
摘要： Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.
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公开(公告)号：US20240128403A1
公开(公告)日：2024-04-18
申请号：US18395445
申请日：2023-12-22
发明人： Wei LIU , Weiwen LIU , Shaowen PENG , Fengjie LIN , Hongyi ZHOU
IPC分类号： H01L33/10 , H01L25/075 , H01L33/00
CPC分类号： H01L33/10 , H01L25/0753 , H01L33/007 , H01L33/32
摘要： The present disclosure provides a micro light-emitting element, method for manufacturing a micro light-emitting element, and a light-emitting device. The micro light-emitting element includes a DBR structure layer, including a DBR adhesive layer, a DBR reflective layer, and a DBR sacrificial layer, where the DBR adhesive layer, the DBR reflective layer, and the DBR sacrificial layer are sequentially stacked. Subsequent structural coverage of a DBR reflective layer is improved by means of the DBR adhesion layer. Density of film layers of the DBR sacrificial layer, the DBR reflective layer, and the DBR adhesive layer are sequentially increased, so that etching rates of the DBR sacrificial layer, the DBR reflective layer, and the DBR adhesive layer are sequentially decreased during etching, thereby forming an inverted trapezoidal through hole which comprises an inclined side wall by an etching process.
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27.发明授权公开(公告)号：US11621380B2
公开(公告)日：2023-04-04
申请号：US16626517
申请日：2018-07-31
发明人： Xingen Wu , Yingce Liu , Junxian Li , Qilong Wu
摘要： A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.
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28.发明授权公开(公告)号：US11456399B2
公开(公告)日：2022-09-27
申请号：US16624930
申请日：2018-07-30
发明人： Zhendong Wei , Junxian Li , Qilong Wu , Yingce Liu , Hongyi Zhou
摘要： A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while an N-type electrode is electrically linked with said N-type semiconductor layer.
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公开(公告)号：US20200251616A1
公开(公告)日：2020-08-06
申请号：US16680483
申请日：2019-11-11
发明人： Yingce LIU , Junxian LI , Zhao LIU , Zhendong WEI , Xuan HUANG
摘要： A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.
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公开(公告)号：US10468550B2
公开(公告)日：2019-11-05
申请号：US16220264
申请日：2018-12-14
发明人： Zhiwei Lin , Kaixuan Chen , Junxian Li , Xiangjing Zhuo , Qilong Wu
摘要： A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.
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