公开(公告)号：US09460888B2

公开(公告)日：2016-10-04

申请号：US15059199

申请日：2016-03-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon Youn Jung ,  Dong Hoon Song ,  Jin Sun Kim

IPC: H01J37/06 ,  H01J37/244

CPC classification number: H01J37/06 ,  H01J3/024 ,  H01J2237/049 ,  H01J2237/061 ,  H01J2237/06325 ,  H01J2237/06366 ,  H01J2237/0656 ,  H01J2237/2482

Abstract: Provided may include an electron beam generator, an image apparatus including the same, and an optical apparatus. The optical apparatus includes a first and second laser apparatuses providing a first and second laser beams on a substrate, and a first optical system provided between the first and second laser apparatuses and the substrate to focus the first and second laser beams. The first and second laser beams overlap with each other generating an interference beam, thereby decreasing a spot size of the interference beam to be smaller than a wavelength of each of the first and second laser beams at a focal point.

Abstract translation: 可以提供电子束发生器，包括该电子束发生器的图像装置和光学装置。 光学装置包括在基板上提供第一和第二激光束的第一和第二激光装置，以及设置在第一和第二激光装置与基板之间的第一和第二激光束聚焦的第一光学系统。 第一和第二激光束彼此重叠，产生干涉光束，从而将干涉光束的光点尺寸减小为小于焦点处的第一和第二激光束的每一个的波长。

公开(公告)号：US20090166555A1

公开(公告)日：2009-07-02

申请号：US12005757

申请日：2007-12-28

Applicant: Joseph C. Olson ,  Jay T. Scheuer

Inventor： Joseph C. Olson ,  Jay T. Scheuer

IPC: H01J27/00

CPC classification number: H01J27/18 ,  H01J27/026 ,  H01J37/08 ,  H01J37/30 ,  H01J37/31 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/0812 ,  H01J2237/31701

Abstract: The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.

Abstract translation: 本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。 气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。 这种污染是由使用热离子源引起的，因为它们赋予污染物，并且由于它们升高的工作温度也容易产生短暂的生命周期。 虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。 在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。 通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

公开(公告)号：US20050184257A1

公开(公告)日：2005-08-25

申请号：US10784315

申请日：2004-02-20

Applicant: Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

Inventor： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

IPC: H01J37/304

CPC classification number: H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

Abstract: One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

Abstract translation: 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理参数电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

公开(公告)号：US20160260575A1

公开(公告)日：2016-09-08

申请号：US15059199

申请日：2016-03-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon Youn JUNG ,  Dong Hoon SONG ,  Jin Sun KIM

IPC: H01J37/06 ,  H01J37/244

CPC classification number: H01J37/06 ,  H01J3/024 ,  H01J2237/049 ,  H01J2237/061 ,  H01J2237/06325 ,  H01J2237/06366 ,  H01J2237/0656 ,  H01J2237/2482

Abstract: Provided may include an electron beam generator, an image apparatus including the same, and an optical apparatus. The optical apparatus includes a first and second laser apparatuses providing a first and second laser beams on a substrate, and a first optical system provided between the first and second laser apparatuses and the substrate to focus the first and second laser beams. The first and second laser beams overlap with each other generating an interference beam, thereby decreasing a spot size of the interference beam to be smaller than a wavelength of each of the first and second laser beams at a focal point.

Abstract translation: 可以提供电子束发生器，包括该电子束发生器的图像装置和光学装置。 光学装置包括在基板上提供第一和第二激光束的第一和第二激光装置，以及设置在第一和第二激光装置与基板之间以使第一和第二激光束聚焦的第一光学系统。 第一和第二激光束彼此重叠，产生干涉光束，从而将干涉光束的光点尺寸减小为小于焦点处的第一和第二激光束的波长的波长。

公开(公告)号：US08445870B2

公开(公告)日：2013-05-21

申请号：US13338456

申请日：2011-12-28

Applicant: Shouyin Zhang ,  Tom Miller ,  Sean Kellog ,  Anthony Graupera

Inventor： Shouyin Zhang ,  Tom Miller ,  Sean Kellog ,  Anthony Graupera

IPC: H01J37/30 ,  H01J37/302

CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Abstract translation: 一种在采用电感耦合等离子体离子源的聚焦离子束（FIB）系统中进行铣削和成像的方法，其中使用两组FIB系统操作参数：第一组，表示用于在铣削中操作FIB系统的优化参数 模式，以及表示用于在成像模式下操作的优化参数的第二组。 这些操作参数可以包括ICP源中的气体压力，ICP源的RF功率，离子提取电压，以及在一些实施例中，FIB系统离子列内的各种参数，包括透镜电压和光束限定孔直径 。 优化的铣削工艺提供了从基材表面快速去除材料的体积（低空间分辨率）的最大研磨速度。 优化的成像过程提供最小化的材料去除和更高的空间分辨率，用于改进正在研磨的衬底区域的成像。

公开(公告)号：US07609815B2

公开(公告)日：2009-10-27

申请号：US11757137

申请日：2007-06-01

Applicant: Ka-Ngo Leung ,  Qing Ji ,  William A. Barletta ,  Ximan Jiang ,  Lili Ji

Inventor： Ka-Ngo Leung ,  Qing Ji ,  William A. Barletta ,  Ximan Jiang ,  Lili Ji

IPC: H01J35/06

CPC classification number: G01N23/203 ,  B82Y10/00 ,  B82Y40/00 ,  G01V5/0008 ,  H01J3/025 ,  H01J3/04 ,  H01J27/024 ,  H01J35/00 ,  H01J37/045 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2235/06 ,  H01J2235/068 ,  H01J2237/0435 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/06375 ,  H01J2237/3171

Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

Abstract translation: 公开了用于将子束可控地引导到目标衬底的技术。 子束可以是正离子或电子。 已经表明，可以制造直径为1um的子束，孔径间隔为12μm。 这种子束的阵列可用于无掩模光刻。 通过子束相对于目标衬底的逐步运动，各个器件可以被直接电子束写入。 离子束也可以直接写入。 由于从多焦源提取的子束的高亮度，认为光刻曝光的曝光时间被最小化。 或者，子束可以是撞击高Z材料用于X射线产生的电子，然后准直以提供图案化的X射线曝光，例如在CAT扫描中使用的那些。 这种装置可用于远程检测炸药。

公开(公告)号：US20090114815A1

公开(公告)日：2009-05-07

申请号：US11935738

申请日：2007-11-06

Applicant: Bo H. Vanderberg ,  William F. DiVergilio

Inventor： Bo H. Vanderberg ,  William F. DiVergilio

IPC: H01J37/317 ,  B05C5/02 ,  H01J17/16

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/06366

Abstract: A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.

Abstract translation: 一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极 发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

公开(公告)号：US20080049888A1

公开(公告)日：2008-02-28

申请号：US11757137

申请日：2007-06-01

Applicant: Ka-Ngo Leung ,  Qing Ji ,  William Barletta ,  Ximan Jiang ,  Lili Ji

Inventor： Ka-Ngo Leung ,  Qing Ji ,  William Barletta ,  Ximan Jiang ,  Lili Ji

IPC: G21K1/02 ,  G01N23/203 ,  H01J37/08

CPC classification number: G01N23/203 ,  B82Y10/00 ,  B82Y40/00 ,  G01V5/0008 ,  H01J3/025 ,  H01J3/04 ,  H01J27/024 ,  H01J35/00 ,  H01J37/045 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2235/06 ,  H01J2235/068 ,  H01J2237/0435 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/06375 ,  H01J2237/3171

Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

Abstract translation: 公开了用于将子束可控地引导到目标衬底的技术。 子束可以是正离子或电子。 已经表明，可以制造直径为1um的子束，孔径间隔为12μm。 这种子束的阵列可用于无掩模光刻。 通过子束相对于目标衬底的逐步运动，各个器件可以被直接电子束写入。 离子束也可以直接写入。 由于从多焦源提取的子束的高亮度，认为光刻曝光的曝光时间被最小化。 或者，子束可以是撞击高Z材料用于X射线产生的电子，然后准直以提供图案化的X射线曝光，例如在CAT扫描中使用的那些。 这种装置可用于远程检测炸药。

公开(公告)号：US4827137A

公开(公告)日：1989-05-02

申请号：US856950

申请日：1986-04-28

Applicant: George J. Collins ,  Jayaram Krishnaswamy

Inventor： George J. Collins ,  Jayaram Krishnaswamy

IPC: G03F7/20 ,  H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2047 ,  H01J37/3175 ,  H01J2237/06366 ,  H01J2237/31788

Abstract: A cold cathode glow discharge electron gun operating in the abnormal glow region produces a wide area collimated electron beam employed for flood exposure of thin film materials through electron beam transmission masks, resulting in spatially localized exposure and patterning of the thin film materials.

Abstract translation: 在异常辉光区域中操作的冷阴极辉光放电电子枪产生用于薄膜材料通过电子束透射掩模进行暴露曝光的广泛准直电子束，导致薄膜材料的空间局部曝光和图案化。

公开(公告)号：US11862426B1

公开(公告)日：2024-01-02

申请号：US16024215

申请日：2018-06-29

Applicant: Teledyne FLIR Detection, Inc.

Inventor： James Mitchell Wells ,  Douglas K. Martins ,  Mark Gildersleeve ,  Rakesh Patel

IPC: H01J3/02

CPC classification number: H01J3/025 ,  H01J2237/063 ,  H01J2237/06366 ,  H01J2237/06375

Abstract: The present disclosure provides electron source devices, electron source assemblies, and/or methods for generating electrons. The generated electrons can be used to facilitate spectroscopy, such as mass spectrometry, including mass selection or ion mobility.