公开(公告)号：US10418290B2

公开(公告)日：2019-09-17

申请号：US15423544

申请日：2017-02-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Hon-Huei Liu ,  Chia-Hung Lin ,  Yu-Cheng Tung

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/027 ,  H01L29/66

Abstract: A method of patterning a semiconductor device includes following steps. First of all, a substrate is provided, and a first target pattern is formed in the substrate. Next, a second target pattern is formed on the substrate, across the first target pattern. Then, a third pattern is formed on a hard mask layer formed on the substrate, by using an electron beam apparatus, wherein two opposite edges of the third pattern are formed under an asymmetry control.

公开(公告)号：US20180203344A1

公开(公告)日：2018-07-19

申请号：US15436764

申请日：2017-02-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung ,  Chia-Hung Lin

IPC: G03F1/58 ,  G03F1/54

CPC classification number: G03F1/58 ,  G03F1/54

Abstract: A photomask includes a substrate, a patterned absorber layer disposed on the substrate, and a plurality of openings. Each of the openings penetrates the patterned absorber layer and exposes a part of the substrate. At least two of the openings are disposed adjacent to each other in a first direction. At least a part of the patterned absorber layer disposed between the two adjacent openings in the first direction has a first thickness. A part of the patterned absorber layer disposed at two opposite edges of each of the openings in a second direction different from the first direction has a second thickness. Another part of the patterned absorber layer disposed at the two opposite edges of each of the openings in the second direction has a third thickness. The first thickness is equal to the second thickness, and the first thickness is different from the third thickness.

公开(公告)号：US20150072532A1

公开(公告)日：2015-03-12

申请号：US14025524

申请日：2013-09-12

Applicant: United Microelectronics Corp.

Inventor： Wen-Liang Huang ,  Chia-Hung Lin ,  Chun-Chi Yu

IPC: H01L21/308

CPC classification number: H01L21/3086 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/3088

Abstract: A patterning method is provided. First, a material layer is formed over a substrate. Thereafter, a plurality of directed self-assembly (DSA) patterns are formed on the material layer. Afterwards, a patterned photoresist layer is formed by using a single lithography process. The patterned photoresist layer covers a first portion of the DSA patterns and exposes a second portion of the DSA patterns. Further, the material layer is patterned by an etching process, using the patterned photoresist layer and the second portion of the DSA patterns as a mask.

Abstract translation: 提供了图案化方法。 首先，在基板上形成材料层。 此后，在材料层上形成多个定向自组装（DSA）图案。 之后，通过使用单个光刻工艺形成图案化的光致抗蚀剂层。 图案化的光致抗蚀剂层覆盖DSA图案的第一部分并且暴露DSA图案的第二部分。 此外，通过蚀刻工艺，使用图案化的光致抗蚀剂层和DSA图案的第二部分作为掩模来对材料层进行图案化。