公开(公告)号：US20180334383A1

公开(公告)日：2018-11-22

申请号：US16009668

申请日：2018-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Ping CHEN ,  Carlos H. DIAZ ,  Ken-Ichi GOTO ,  Shau-Lin SHUE ,  Tai-I YANG

IPC: B82B1/00 ,  B82B3/00

Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer, wherein the beam structure includes a plurality of strip structures. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.