公开(公告)号：US11030383B2

公开(公告)日：2021-06-08

申请号：US16883546

申请日：2020-05-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chun-Yao Ku ,  Wen-Hao Chen ,  Ming-Tao Yu ,  Shao-Huan Wang ,  Jyun-Hao Chang

IPC: G06F30/398 ,  G06F30/394 ,  G06F119/10

Abstract: A method of forming an integrated device includes: providing a first via pillar file specifying a first via pillar; providing a second via pillar file specifying a second via pillar; arranging, by a processor, the first via pillar to electrically connect to a circuit cell in a first circuit; arranging an interconnecting path for electrical connection of the first via pillar to another circuit cell in the first circuit; arranging, by the processor, the second via pillar to replace the first via pillar when the first via pillar induces an electromigration (EM) phenomenon; re-routing the interconnecting path with replacement of the first via pillar to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.